ZXM62P02E6
20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=-20V; R
DS(ON)
=0.20
;
I
D
=-2.3A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
SOT23-6
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXM62P02E6TA
ZXM62P02E6TC
REEL SIZE
(inches)
7
13
TAPE WIDTH (mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
Top View
3000 units
10000 units
DEVICE MARKING
•
2P02
ISSUE 1 - JUNE 2004
1
ZXM62P02E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (V
GS
=-4.5V; T
A
=25°C)(b)
(V
GS
=-4.5V; T
A
=70°C)(b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
LIMIT
-20
±
12
-2.3
-1.7
-13
-1.9
-13
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ISSUE 1 - JUNE 2004
2
ZXM62P02E6
CHARACTERISTICS
100
Refer Note (a)
Max Power Dissipation (Watts)
2
-I
D
- Drain Current (A)
1.5
Refer Note (b)
10
1
Refer Note (a)
1
0.1
DC
1s
100ms
10ms
1ms
100µs
0.5
0.1
1
10
100
0
0
20
40
60
80
100
120
140
160
-V
DS
- Drain-Source Voltage (V)
T - Temperature (° )
Safe Operating Area
Derating Curve
80
120
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
Refer Note (b)
Refer Note (a)
100
80
60
40
D=0.2
D=0.5
60
40
D=0.5
20
D=0.2
D=0.1
D=0.05
20
D=0.1
D=0.05
Single Pulse
0
0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
0
0.0001 0.001 0.01
0.1
1
10
100
1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
ISSUE 1 - JUNE 2004
3
ZXM62P02E6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
V
SD
t
rr
Q
rr
22.5
10.4
-0.95
V
ns
nC
T
j
=25°C, I
S
=-1.6A,
V
GS
=0V
T
j
=25°C, I
F
=-1.6A,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
4.1
15.4
12.0
19.2
5.8
1.25
2.8
ns
ns
ns
ns
nC
nC
nC
V
DS
=-16V,V
GS
=-4.5V,
I
D
=-1.6A
(Refer to test circuit)
V
DD
=-10V, I
D
=-1.6A
R
G
=6.0Ω, R
D
=6.1Ω
(Refer to test circuit)
C
iss
C
oss
C
rss
320
150
75
pF
pF
pF
V
DS
=-15 V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
1.5
-0.7
0.2
0.375
-20
-1
±100
V
µA
nA
V
Ω
Ω
S
I
D
=-250µA, V
GS
=0V
V
DS
=-20V, V
GS
=0V
V
GS
=± 12V, V
DS
=0V
I
D
=-250µA, V
DS
= V
GS
V
GS
=-4.5V, I
D
=-1.6A
V
GS
=-2.7V, I
D
=-0.8A
V
DS
=-10V,I
D
=-0.8A
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
4
ZXM62P02E6
TYPICAL CHARACTERISTICS
100
+25°C
100
+150°C
-I
D
- Drain Current (A)
-I
D
- Drain Current (A)
5V
4.5V
-VGS
10
4V
3.5V
3V
2.5V
5V
4.5V
10
-VGS
4V
3.5V
3V
2.5V
2V
1
2V
1
0.1
0.1
1
10
100
0.1
0.1
1
10
100
-V
DS
- Drain-Source Voltage (V)
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
VDS=-10V
Normalised R
DS(on)
and V
GS(th)
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-100
VGS=VDS
ID=-250µA
VGS(th)
RDS(on)
VGS=-4.5V
ID=-1.6A
-I
D
- Drain Current (A)
10
1
T=150°C
T=25°C
0.1
1
1.5
2
2.5
3
3.5
4
4.5
5
-50
0
50
100
150
200
-V
GS
- Gate-Source Voltage (V)
T
j
- Junction Temperature (°C)
Typical Transfer Characteristics
RDS(on) - Drain-Source On-Resistance (Ω )
Normalised R
DS(on)
and V
GS(th)
v Temperature
100
10
-I
SD
- Reverse Drain Current (A)
10
1
1
T=150°C
T=25°C
VGS=-3V
VGS=-5V
0.1
0.1
1
10
100
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-I
D
- Drain Current (A)
-V
SD
- Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 1 - JUNE 2004
5
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