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ZXM64N03X_05

Description
30V N-CHANNEL ENHANCEMENT MODE MOSFET
File Size332KB,7 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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ZXM64N03X_05 Overview

30V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXM64N03X
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=30V; R
DS(ON)
=0.045
DESCRIPTION
I
D
=5.0A
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
MSOP8
APPLICATIONS
DC - DC converters
Power management functions
Disconnect switches
Motor control
Pin out
ORDERING INFORMATION
DEVICE
ZXM64N03XTA
ZXM64N03XTC
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
12 embossed
12 embossed
QUANTITY
PER REEL
1,000
4,000
S
S
S
G
1
D
D
D
D
DEVICE MARKING
ZXM4P03
Top view
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS

ZXM64N03X_05 Related Products

ZXM64N03X_05 ZXM64N03XTA ZXM64N03X ZXM64N03XTC
Description 30V N-CHANNEL ENHANCEMENT MODE MOSFET 30V N-CHANNEL ENHANCEMENT MODE MOSFET 30V N-CHANNEL ENHANCEMENT MODE MOSFET 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Is it Rohs certified? - incompatible incompatible incompatible
Maker - Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors
package instruction - MSOP-8 MSOP-8 MSOP-8
Reach Compliance Code - unknow unknown unknown
ECCN code - EAR99 EAR99 EAR99
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 30 V 30 V 30 V
Maximum drain current (ID) - 5 A 3.9 A 5 A
Maximum drain-source on-resistance - 0.045 Ω 0.06 Ω 0.045 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - S-PDSO-G8 R-PDSO-G8 S-PDSO-G8
JESD-609 code - e0 e0 e0
Humidity sensitivity level - 1 1 1
Number of components - 1 1 1
Number of terminals - 8 8 8
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - SQUARE RECTANGULAR SQUARE
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL
Certification status - Not Qualified Not Qualified Not Qualified
surface mount - YES YES YES
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - GULL WING GULL WING GULL WING
Terminal location - DUAL DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON
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