ZXM64N03X
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=30V; R
DS(ON)
=0.045
DESCRIPTION
I
D
=5.0A
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
MSOP8
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
Pin out
ORDERING INFORMATION
DEVICE
ZXM64N03XTA
ZXM64N03XTC
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
12 embossed
12 embossed
QUANTITY
PER REEL
1,000
4,000
S
S
S
G
1
D
D
D
D
DEVICE MARKING
ZXM4P03
Top view
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS
ZXM64N03X
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current
(V
GS
=4.5V; T
A
=25°C)(b)
(V
GS
=4.5V; T
A
=70°C)(b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
LIMIT
30
20
5.0
4.0
30
2.4
30
1.1
8.8
1.8
14.4
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
70
UNIT
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - OCTOBER 2005
2
SEMICONDUCTORS
ZXM64N03X
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
V
SD
t
rr
Q
rr
24.5
19.1
0.95
V
ns
nC
T
j
=25°C, I
S
=3.7A,
V
GS
=0V
T
j
=25°C, I
F
=3.7A,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
4.2
4.5
20.5
8
27
5
4.5
ns
ns
ns
ns
nC
nC
nC
V
DS
=24V,V
GS
=10V,
I
D
=3.7A
(Refer to test circuit)
V
DD
=5V, I
D
=3.7A
R
G
=6.2Ω, R
D
=4.0Ω
(Refer to test circuit)
C
iss
C
oss
C
rss
950
200
50
pF
pF
pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
4.3
1.0
0.045
0.060
30
1
±100
V
µA
nA
V
Ω
Ω
S
I
D
=-250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=± 20V, V
DS
=0V
I =-250µA, V
DS
= V
GS
D
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
V
GS
=10V, I
D
=3.7A
V
GS
=4.5V, I
D
=1.9A
V
DS
=10V,I
D
=-1.9A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
4
SEMICONDUCTORS
京公网安备 11010802033920号
EEWORLD
