EEWORLDEEWORLDEEWORLD

Part Number

Search

ZXM66P02N8

Description
6400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size55KB,4 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

ZXM66P02N8 Overview

6400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZXM66P02N8 Parametric

Parameter NameAttribute value
Minimum breakdown voltage20 V
Number of terminals8
Processing package descriptionSOIC-8
each_compliYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateActive
structureSINGLE WITH BUILT-IN DIODE
drain_current_max__abs___id_8 A
Maximum leakage current6.4 A
Maximum drain on-resistance0.0250 ohm
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
jesd_30_codeR-PDSO-G8
jesd_609_codee3
moisture_sensitivity_level1
Number of components1
operating modeENHANCEMENT MODE
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_260
larity_channel_typeP-CHANNEL
wer_dissipation_max__abs_2.5 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountYES
terminal coatingMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_40
transistor applicationsSWITCHING
Transistor component materialsSILICON
dditional_featureLOW THRESHOLD
ZXM66P02N8
20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
=-20V; R
DS(ON)
=0.025
D
=-8.0A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
SO8
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
2 1
S
S
D
D
D
ORDERING INFORMATION
DEVICE
ZXM66P02N8TA
ZXM66P02N8TC
REEL SIZE
7”
7”
TAPE WIDTH
12mm
12mm
QUANTITY
PER REEL
500
units
S
3
2500 units
DEVICE MARKING
ZXM6
6P02
ISSUE 1 - JUNE 2004
1
4
Top View
5
6
7
8

ZXM66P02N8 Related Products

ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8_04 ZXM66P02N8TC
Description 6400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 6400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 6400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 6400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals 8 8 8 8
Number of components 1 1 1 1
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1989  1906  447  1697  1806  41  39  9  35  37 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号