ZXMN10A11G
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 100V; R
DS(ON)
= 0.35
DESCRIPTION
I
D
= 2.4A
This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT223 package
SOT223
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Relay and solenoid driving
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN10A11GTA
ZXMN10A11GTC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
PINOUT
DEVICE MARKING
•
ZXMN
10A11
Top View
ISSUE 5 - DECEMBER 2004
1
SEMICONDUCTORS
ZXMN10A11G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current V
GS
=10V; T
A
=25°C
(b)
V
GS
=10V; T
A
=70°C
(b)
V
GS
=10V; T
A
=25°C
(a)
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
(c)
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Operating and storage temperature range
SYMBOL
V
DSS
V
GS
I
D
LIMIT
100
20
2.4
1.9
1.7
7.9
4.6
7.9
2
16
3.9
31
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width = 300 s - pulse width limited by maximum junction temperature. Refer to
transient Thermal Impedance graph.
SYMBOL
R
θJA
R
θJA
VALUE
62.5
32
UNIT
°C/W
°C/W
ISSUE 5 - DECEMBER 2004
SEMICONDUCTORS
2
ZXMN10A11G
CHARACTERISTICS
ISSUE 5 - DECEMBER 2004
3
SEMICONDUCTORS
ZXMN10A11G
ELECTRICAL CHARACTERISTICS
(at TA = 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
2.0
100
1
100
4.0
0.35
0.45
4
S
V
A
nA
V
I
D
=250 A, V
GS
=0V
V
DS
=100V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I =250 A, V
DS
= V
GS
D
V
GS
=10V, I
D
=2.6A
V
GS
=6V, I
D
=1.3A
V
DS
=15V,I
D
=2.6A
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Static drain-source On-State resistance
(1)
R
DS(on)
Forward transconductance
(3)
DYNAMIC
(3)
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
(2) (3)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate charge
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
2.7
1.7
7.4
3.5
3
C
iss
C
oss
C
rss
274
21
11
g
fs
pF
pF
pF
V
DS
=50 V, V
GS
=0V,
f=1MHz
ns
ns
ns
ns
nC
V
DS
=50V, V
GS
=5V,
I
D
=2.5A
V
DS
=50V,V
GS
=10V,
I
D
=2.5A
V
DD
=50V, I
D
=1A
R
G
≅6.0
, V
GS
=10V
Total gate charge
Gate-source charge
Gate-drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
Reverse recovery time
(3)
Reverse recovery charge
(3)
5.4
1.4
1.5
nC
nC
nC
V
SD
t
rr
Q
rr
0.85
26
30
0.95
V
ns
nC
T
J
=25°C, I
S
=1.85A,
V
GS
=0V
T
J
=25°C, I
F
=1.0A,
di/dt= 100A/μs
NOTES:
(1) Measured under pulsed conditions. Width
≤
300μs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 5 - DECEMBER 2004
SEMICONDUCTORS
4
ZXMN10A11G
TYPICAL CHARACTERISTICS
ISSUE 5 - DECEMBER 2004
5
SEMICONDUCTORS
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