ZXMN6A07F
60V SOT23 N-channel enhancement mode mosfet
Summary
V
(BR)DSS
60
R
DS(on)
( )
0.250 @ V
GS
= 10V
0.350 @ V
GS
= 4.5V
I
D
(A)
1.4
1.2
Description
This new generation trench MOSFET from Zetex utilizes a unique
structure combining the benefits of low on-state resistance with fast
switching speed.
D
G
S
Features
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
SOT23 package
S
D
G
Top view
Applications
•
•
•
•
DC-DC converters
Power management functions
Relay and solenoid driving
Motor control
Ordering information
Device
ZXMN6A07FTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per
reel
3,000
Device marking
7N6
Issue 6 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
ZXMN6A07F
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ V
GS
= 10V; T
amb
=25°C
(b)
@ V
GS
= 10V; T
amb
=70°C
(b)
@ V
GS
= 10V; T
amb
=25°C
(a)
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
(c)
Power dissipation at T
amb
=25°C
(a)
Linear derating factor
Power dissipation at T
amb
=25°C
(b)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
I
DM
I
S
I
SM
P
D
Symbol
V
DSS
V
GS
I
D
Limit
60
±
20
1.4
1.1
1.2
6.9
1
6.9
625
5
806
6.4
-55 to +150
A
A
A
mW
mW/°C
mW
mW/°C
°C
Unit
V
V
A
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Symbol
R
JA
R
JA
Limit
200
155
Unit
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
temperature.
Issue 6 - January 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com
ZXMN6A07F
Thermal characteristics
Issue 6 - January 2007
© Zetex Semiconductors plc 2007
3
www.zetex.com
ZXMN6A07F
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Static
Drain-source breakdown
voltage
Gate-body leakage
V
(BR)DSS
60
1
100
1.0
3.0
0.250
0.350
2.3
S
V
A
nA
V
I
D
= 250 A, V
GS
=0V
V
DS
= 60V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
= 250 A, V
DS
=V
GS
V
GS
= 10V, I
D
= 1.8A
V
GS
= 4.5V, I
D
= 1.3A
V
DS
= 15V, I
D
= 1.8A
V
DS
= 40V, V
GS
=0V
f=1MHz
Symbol
Min.
Typ.
Max.
Unit
Conditions
Zero gate voltage drain current I
DSS
I
GSS
R
DS(on)
Gate-source threshold voltage V
GS(th)
Static drain-source on-state
resistance
(*)
Forward transconductance
(*)(‡)
g
fs
Dynamic
(‡)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
(†) (‡)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
(*)
Reverse recovery time
(‡)
Reverse recovery charge
(‡)
V
SD
t
rr
Q
rr
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
166
19.5
8.7
pF
pF
pF
1.8
1.4
4.9
2.0
1.65
3.2
0.67
0.82
0.80
20.5
21.3
0.95
ns
ns
ns
ns
V
DD
= 30V, V
GS
= 10V
I
D
= 1.8A
R
G
≈
6.0
V
DS
= 30V, V
GS
= 5V
I
D
= 1.8A
nC
nC
nC
V
ns
nC
T
j
=25°C, I
S
= 0.45A,
V
GS
=0V
T
j
=25°C, I
F
= 1.8A,
di/dt=100A/ s
V
DS
= 30V, V
GS
= 10V
I
D
= 1.8A
NOTES:
(*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 6 - January 2007
© Zetex Semiconductors plc 2007
4
www.zetex.com
ZXMN6A07F
Typical characteristics
Issue 6 - January 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
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