ZXMN6A08E6
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
60
R
DS(on)
( )
0.080 @ V
GS
= 10V
0.150 @ V
GS
= 4.5V
I
D
(A)
3.5
2.5
DESCRIPTION
This new generation trench MOSFET from Zetex features a unique structure
combining the benefits of low on-resistance and fast switching, making it ideal for
high efficiency power management applications.
SOT23-6
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23-6 package
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
ZXMN6A08E6TA
ZXMN6A08E6TC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
Top View
DEVICE MARKING
•
6A8
ISSUE 4 - MAY 2006
1
ZXMN6A08E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V DSS
V GS
ID
LIMIT
60
20
3.5
2.8
2.8
16
2.6
16
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
A
I DM
IS
I SM
PD
PD
T j :T stg
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ISSUE 4 - MAY 2006
2
ZXMN6A08E6
CHARACTERISTICS
ISSUE 4 - MAY 2006
3
ZXMN6A08E6
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
1
0.080
0.150
6.6
S
60
0.5
100
V
A
nA
V
I D =250 A, V GS =0V
V DS =60V, V GS =0V
V GS = 20V, V DS =0V
I =250 A, V DS = V GS
D
V GS =10V, I D =4.8A
V GS =4.5V, I D =4.2A
V DS =15V,I D =4.8A
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Static Drain-Source On-State Resistance R DS(on)
(1)
Forward Transconductance (1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V SD
t rr
Q rr
0.88
19.2
30.3
t d(on)
tr
t d(off)
tf
Qg
Qg
Q gs
Q gd
2.6
2.1
12.3
4.6
4.0
5.8
1.4
1.9
C iss
C oss
C rss
459
44.2
24.1
g fs
pF
pF
pF
V DS =40 V, V GS =0V,
f=1MHz
ns
ns
ns
ns
nC
nC
nC
nC
V DS =30V,V GS =10V,
I
D
=1.4A
V DS =30V,V GS =5V,
I
D
=1.4A
V DD =30V, I D =1.5A
R G≅6.0 , V GS =10V
1.2
V
ns
nC
T J =25°C, I S =4A,
V GS =0V
T J =25°C, I S =1.4A,
di/dt= 100A/µs
NOTES
(1) Measured under pulsed conditions. Pulse width=300µs; duty cycle
≤2%
.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 4 - MAY 2006
4
ZXMN6A08E6
TYPICAL CHARACTERISTICS
ISSUE 4 - MAY 2006
5
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