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ZXMN6A11Z_06

Description
2400 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size567KB,8 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

ZXMN6A11Z_06 Overview

2400 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZXMN6A11Z_06 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage60 V
Processing package descriptionSOT-89, 3 PIN
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Maximum leakage current2.4 A
Maximum drain on-resistance0.1400 ohm
ZXMN6A11Z
60V SOT89 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
60
R
DS(on)
( )
0.120 @ V
GS
= 10V
0.180 @ V
GS
= 4.5V
I
D
(A)
3.6
2.9
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT89 package
D
G
S
Applications
DC-DC converters
Power management functions
Disconnect switches
Motor control
S
D
D
G
Tape width
(mm)
12
Quantity per
reel
1,000
Ordering information
Device
ZXMN6A11ZTA
Reel size
(inches)
7
Top view
Device marking
11N6
Issue 2 - September 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com

ZXMN6A11Z_06 Related Products

ZXMN6A11Z_06 ZXMN6A11Z
Description 2400 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 2400 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals 3 3
Minimum breakdown voltage 60 V 60 V
Processing package description SOT-89, 3 PIN SOT-89, 3 PIN
EU RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form FLAT FLAT
terminal coating MATTE TIN MATTE TIN
Terminal location SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Shell connection DRAIN DRAIN
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Channel type N-CHANNEL N-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current 2.4 A 2.4 A
Maximum drain on-resistance 0.1400 ohm 0.1400 ohm
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