ZXMP10A18K
100V DPAK P-channel enhancement mode MOSFET
Summary
V
(BR)DSS
-100
0.190 @ V
GS
= -6V
-5.2
R
DS(on)
( )
0.150 @ V
GS
= -10V
I
D
(A)
-5.9
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
D
G
Features
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
DPAK package
S
D
Applications
•
•
•
•
DC-DC converters
Power management functions
Disconnect switches
Motor control
D
G
S
Pinout - top view
Ordering information
Device
ZXMP10A18KTC
Reel size
(inches)
13
Tape width
(mm)
16
Quantity
per reel
2,500
Device marking
ZXMP
10A18
Issue 1 - August 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
ZXMP10A18K
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ V
GS
= 10V; T
amb
=25°C
(b)
@ V
GS
= 10V; T
amb
=70°C
(b)
@ V
GS
= 10V; T
amb
=25°C
(a)
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
(c)
Power dissipation at T
amb
= 25°C
(a)
Linear derating factor
Power dissipation at T
amb
= 25°C
(b)
Linear derating factor
Power dissipation at T
amb
= 25°C
(d)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
P
D
I
DM
I
S
I
SM
P
D
Symbol
V
DSS
V
GS
I
D
Limit
-100
± 20
-5.9
-4.7
-3.8
-21.1
-10
-21.1
4.3
34.4
10.2
81.3
2.17
17.4
-55 to +150
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Unit
V
V
A
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(d)
Symbol
R
JA
R
JA
R
JA
Limit
29
12.3
57.6
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 1 - August 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
ZXMP10A18K
Thermal characteristics
Issue 1 - August 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
ZXMP10A18K
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Static
Drain-source breakdown voltage V
(BR)DSS
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
(*)
Forward transconductance
(*)(‡)
Dynamic
(‡)
(3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
(†) (‡)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
(*)
Reverse recovery time
(‡)
Reverse recovery charge
(‡)
V
SD
t
rr
Q
rr
-0.85
49
107
-0.95
V
ns
nC
T
j
=25°C, I
S
= -3.5A,
V
GS
=0V
T
j
=25°C, I
S
= -2.8A,
di/dt=100A/ms
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
4.9
6.8
33.9
17.9
26.9
3.9
10.2
ns
ns
ns
ns
nC
nC
nC
V
DS
= -50V, V
GS
= -10V
I
D
= -2.8A
V
DD
= -50V, I
D
= -1A
R
G
=6.0 , V
GS
= -10V
C
iss
C
oss
C
rss
1055
90
76
pF
pF
pF
V
DS
= -50V, V
GS
=0V
f=1MHz
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
6.0
-2.0
-100
-1
100
-4.0
0.150
0.190
S
V
A
nA
V
I
D
= -250 A, V
GS
=0V
V
DS
= -100V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
= -250 A, V
DS
=V
GS
V
GS
= -10V, I
D
= -2.8A
V
GS
= -6V, I
D
= -2.4A
V
DS
= -15V, I
D
= -2.8A
Symbol
Min.
Typ.
Max.
Unit
Conditions
NOTES:
(*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - August 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXMP10A18K
Typical characteristics
Issue 1 - August 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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