ZXTN08400BFF
400V, SOT23F, NPN medium power high voltage transistor
Summary
BV
CEX
> 450V
BV
CEO
> 400V
BV
ECO
> 6V
I
C(cont)
= 0.5A
V
CE(sat)
< 175mV @ 500mA
P
D
= 1.5W
Complementary part number ZXTP08400BFF
Description
This NPN transistor has been designed for applications requiring high
voltage blocking. The SOT23F package is pin compatible with the
industry standard SOT23 foot print but offers lower profile and higher
dissipation for applications where power density is of utmost
importance.
C
B
Features
•
•
•
High voltage
Low saturation voltage
Low profile small outline package
E
E
C
B
Pinout - top view
Tape width
(mm)
8
Quantity
per reel
3000
Applications
•
•
Modems
Telecoms line switching
Ordering information
Device
ZXTN08400BFFTA
Reel size
(inches)
7
Device marking
1D5
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
ZXTN08400BFF
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking)
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current
(c)
Peak pulse current
Base current
Power dissipation at T
amb
=25°C
(a)
Linear derating factor
Power dissipation at T
amb
=25°C
(b)
Linear derating factor
Power dissipation at T
amb
=25°C
(c)
Linear derating factor
Power dissipation at T
amb
=25°C
(d)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
P
D
P
D
Symbol
V
CBO
V
CEX
V
CEO
V
ECO
V
EBO
I
C
I
CM
I
B
P
D
Limit
450
450
400
6
7
0.5
1
0.2
0.84
6.72
1.34
10.72
1.5
12.0
2.0
16.0
- 55 to 150
Unit
V
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Junction to ambient
(d)
Symbol
R
JA
R
JA
R
JA
R
JA
Limit
149
93
83
60
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
ZXTN08400BFF
Typical characteristics
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
ZXTN08400BFF
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Collector-emitter breakdown
voltage (base open)
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Emitter-base breakdown
voltage
Collector-base cut-off current
Collector-emitter cut-off
current
Emitter-base cut-off current
Collector-emitter saturation
voltage
Symbol
BV
CBO
BV
CEX
BV
CEO
BV
ECX
BV
ECO
BV
EBO
I
CBO
I
CEX
I
EBO
V
CE(sat)
Min.
450
450
400
6
6
7
Typ.
550
550
500
8.0
8.5
8.1
<1
<1
<1
70
50
120
125
Base-emitter saturation voltage V
BE(sat)
Base-emitter turn-on voltage
V
BE(on)
90
100
10
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
OBO
t
d
t
r
t
s
t
f
865
800
165
180
20
40
8
100
52
3122
240
300 s; duty cycle
2%.
Max. Unit Conditions
V
V
V
V
V
V
50
20
100
50
85
70
170
175
950
900
nA
A
nA
nA
mV
mV
mV
mV
mV
mV
I
C
= 100 A
I
C
= 100 A, R
BE
< 1k
-1V < V
BE
< 0.25V
I
C
= 10mA
(*)
I
E
= 100 A, R
BC
< 1k or
0.25V > V
BC
> -0.25V
I
E
= 100 A,
I
E
= 100 A
V
CB
= 360V
V
CB
= 360V, T
amb
= 100°C
V
CE
= 360V, R
BE
< 1k
-1V < V
BE
< 0.25V
V
EB
= 5.6V
I
C
= 20mA, I
B
= 1mA
(*)
I
C
= 50mA, I
B
= 5mA
(*)
I
C
= 300mA, I
B
= 30mA
(*)
I
C
= 500mA, I
B
= 100mA
(*)
I
C
= 500mA, I
B
= 100mA
(*)
I
C
= 500mA, V
CE
= 10V
(*)
I
C
= 1mA, V
CE
= 5V
(*)
300
I
C
= 50mA, V
CE
= 5V
(*)
I
C
= 500mA, V
CE
= 10V
(*)
MHz I
C
= 10mA, V
CE
= 20V
f = 20MHz
10
pF
ns
ns
ns
ns
V
CB
= 20V, f = 1MHz
(*)
V
CC
= 100V.
I
C
= 100mA,
I
B1
= 10mA, I
B2
= 20mA.
or
or
Static forward current transfer h
FE
ratio
NOTES:
(*) Measured under pulsed conditions. Pulse width
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXTN08400BFF
Typical characteristics
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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