SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
ISSUE 5 - AUGUST 2003
FEATURES
* Up to 3.5 Amps continuous collector current, up to 5 Amp peak
* V
CEO
= 300V
* Very low saturation voltage
* Excellent h
FE
specified up to 3 Amps
PARTMARKING DETAIL -
COMPLEMENTARY TYPE -
FZT857
FZT957
FZT857
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
350
300
6
5
3.5
3
-55 to +150
UNIT
V
V
V
A
A
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches square.
FZT857
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
350
TYP.
475
MAX.
UNIT
V
CONDITIONS.
I
C
=100µA
I
C
=1µA, RB
≤1kΩ
I
C
=10mA*
I
E
=100µA
V
CB
=300V
V
CB
=300V,
T
amb
=100°C
V
CB
=300V
V
CB
=300V,
T
amb
=100°C
V
EB
=6V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=3.5A, I
B
=600mA*
I
C
=3.5A, I
B
=600mA*
I
C
=3.5A, V
CE
=10V*
I
C
=10mA, V
CE
=5V
I
C
=500mA, V
CE
=10V*
I
C
=2A, V
CE
=10V*
I
C
=3A, V
CE
=10V*
MHz
I
C
==100mA, V
CE
=10V
f=50MHz
V
CB
=20V, f=1MHz
I
C
=250mA, I
B1
=25mA
I
B2
=25mA, V
CC
=50V
350
300
475
350
V
V
6
8
50
1
50
1
10
100
155
230
345
1250
1.12
V
nA
µA
nA
µA
nA
mV
mV
mV
mV
mV
V
Collector Cut-Off Current
I
CER
R
≤1kΩ
I
EBO
V
CE(sat)
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition Frequency
V
BE(sat)
V
BE(on)
h
FE
100
100
15
200
200
25
15
80
300
f
T
C
obo
t
on
t
off
Output Capacitance
Switching Times
11
100
5300
pF
ns
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
Spice parameter data is available upon request for this device
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