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ZLLS2000_07

Description
2.2 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size157KB,7 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

ZLLS2000_07 Overview

2.2 A, SILICON, RECTIFIER DIODE

ZLLS2000_07 Parametric

Parameter NameAttribute value
Number of terminals6
Number of components1
Processing package descriptionSOT-23, 6 PIN
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit1.1 W
Diode typeRECTIFIER DIODE
applicationEFFICIENCY
Phase1
Maximum reverse recovery time0.0060 us
Maximum average forward current2.2 A
Maximum non-repetitive peak forward current36 A
ZLLS2000
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
SUMMARY
Schottky Diode V
R
= 40V; I
F
= 2.2A; I
R
= 40 A
DESCRIPTION
This compact SOT23-6 packaged Schottky diode offers users an excellent
performance combination comprising high current operation, extremely low leakage
and low forward voltage ensuring suitability for applications requiring efficient
operation at higher temperatures ( above 85 C) see Operational Efficiency chart on
page 4.
Key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area savings
FEATURES
Low equivalent on resistance
Extremely low leakage (40 A @30V)
High current capability (I
F
= 2.2A)
Low V
F
, fast switching Schottky
SOT23-6 package
ZLLS2000 complements low temperature equivalent ZHCS2000
Package thermally rated to 150 C
APPLICATIONS
DC - DC converters
Strobes
Mobile phones
Charging circuits
Motor control
ORDERING INFORMATION
DEVICE
REEL
TAPE WIDTH
(inches) (mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
ZLLS2000TA 7
ZLLS2000TC 13
Top view
DEVICE MARKING
LL20
ISSUE 4 - APRIL 2007
1
SEMICONDUCTORS

ZLLS2000_07 Related Products

ZLLS2000_07 ZLLS2000TA ZLLS2000 ZLLS2000TC
Description 2.2 A, SILICON, RECTIFIER DIODE 2.2 A, SILICON, RECTIFIER DIODE 2.2 A, SILICON, RECTIFIER DIODE 2.2 A, 40 V, SILICON, RECTIFIER DIODE
Number of terminals 6 6 6 6
Number of components 1 1 1 1
surface mount Yes YES Yes YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Phase 1 1 1 1
Maximum reverse recovery time 0.0060 us 0.006 µs 0.0060 us 0.006 µs
Maximum non-repetitive peak forward current 36 A 36 A 36 A 36 A
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