ZMY20
MAGNETIC FIELD SENSOR
DESCRIPTION
The ZMY20 is an extremely sensitive magnetic sensor employing the
magneto-resistive effect of thin film permalloy. It allows the measurement of
magnetic fields or the detection of magnetic parts. The highly sensitive and
small size magnetoresistive sensors consist of a chip covered with thin film
permalloy stripes. These stripes form a Wheatstone bridge, whose output
voltage is proportional to the magnetic field component Hy. A perpendicular
field Hx is necessary to stabilize sensor operation. This can be done by using a
small permanent magnet.
Hy
-V
B
Hx
+V
B
-V
O
+V
O
FEATURES
•
Output voltage proportional to magnetic field Hy
•
Adjustment of sensitivity and suppression of
hysteresis by the auxiliary magnetic field Hx
•
Magnetic fields vertical to the chip level are not
effective
SOT223S
APPLICATIONS
•
Linear position sensors for process control,
door interlocks, proximity detectors, machine
tool sensing
•
Scalar measurement for compassing
•
Automotive – door switches, engine position &
speed sensing
•
Metering of fluids by sensing rotation of impeller
•
Traffic counting & vehicle-type sensing
•
Measurement of current in a conductor without
connection
PINOUT
-V
B
ORDERING INFORMATION
DEVICE
ZMY20TA
ZMY20TC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
+V
O
-V
O
+V
B
V
B
= SUPPLY VOLTAGE
V
O
= OUTPUT VOLTAGE
Top View
DEVICE MARKING
•
ZMY20
ISSUE 2 - NOVEMBER 2002
1
SEMICONDUCTORS
ZMY20
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply voltage
Total power dissipation
Operating temperature range
Storage temperature range
SYMBOL
V
B
P
TOT
T
amb
T
stg
LIMIT
12
120
-40 to +150
-65 to +150
UNIT
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at T
amb
=25°C and H
X
=3 kA/m unless otherwise stated)
PARAMETER
Bridge resistance
Output voltage range
Open circuit sensitivity
Hysteresis of output
voltage
Offset Voltage
Operating frequency
Temp. coeff. of offset
voltage
Temp. coeff. of bridge
resistance
Temp. coeff. of open
circuit sensitivity
V
B
=5V
Temp. coeff. of open
circuit sensitivity
I
B
=3mA
SYMBOL
R
br
V
O
/V
B
S
V
OH
/V
B
V
off
/V
B
f
max
TCV
off
TCR
br
TCS
V
MIN
1.2
16
3.7
-
-1.0
0
-3
0.25
-0.25
TYP
1.7
20
4.7
-
-
-
-
0.3
-0.3
MAX
2.2
24
5.7
50
+1.0
1
+3
0.35
-0.35
UNIT
k
mV/V
(mV/V)/
(kA/m)
µV/V
mV/V
MHz
(µV/V)/K
%/K
%/K
T
amb
= -25 to +125°C
T
amb
= -25 to +125°C
T
amb
= -25 to +125°C
No disturbing field H
d
allowed
Hy
2kA/m
TEST CONDITIONS
TCS
I
-
-0.1
-
%/K
T
amb
= -25 to +125°C
ISSUE 2 - NOVEMBER 2002
SEMICONDUCTORS
2
ZMY20
Sensor sensitivity characteristic
S=f(H
x
)
V
b
=const; T
amb
=25°C
Supply voltage (maximum) derating curve
V
Bmax
=f(T
amb
)
Device mounted on 40 x 40 mm
2
board (copper area 600mm
2
)
ISSUE 2 - NOVEMBER 2002
5
SEMICONDUCTORS
MCU
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