BSP20 datasheet, PDF - EEWORLD Datasheet

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BSP20: DescriptionINNOLINE: RP100-S_DI - Single Output up to 25A Dual Outputs Total Power up to 100W- Input/Output 1.6kVDC Isolation- Adjustable Output Voltage- Under-Voltage Lockout- No Minimum Load- Industry Standard Footprint- Fixed Operating Frequency- Halt Tested- Compact 61.0 x 57.91 x 1; CategoryDiscrete semiconductor The transistor; File Size33KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BSP20 Overview

INNOLINE: RP100-S_DI - Single Output up to 25A Dual Outputs Total Power up to 100W- Input/Output 1.6kVDC Isolation- Adjustable Output Voltage- Under-Voltage Lockout- No Minimum Load- Industry Standard Footprint- Fixed Operating Frequency- Halt Tested- Compact 61.0 x 57.91 x 1

BSP20 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	250 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	40 MHz
VCEsat-Max	0.5 V

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SOT223 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

BSP20

ISSUE 3 FEBRUARY 1996

FEATURES

* High V

CEO

* Low saturation voltage

COMPLEMENTARY TYPE

PARTMARKING DETAIL

BSP20

BSP15

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

PARAMETER

SYMBOL

MIN.

CEO

EBO

tot

stg

CBO

SYMBOL

VALUE

300

250

0.5

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

(BR)CBO

(BR)CEO

(BR)EBO

CBO

Emitter Cut-Off Current I

EBO

CE(sat)

BE(sat)

BE(on)

Static Forward Current h

Transfer Ratio

Transition Frequency

Output Capacitance

obo

300

250

0.5

1.3

2.0

200

MHz

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

For typical characteristics graphs see FMMTA42 datasheet.

3 - 61

=100

=10mA*

=100

=300V

=5V

=50mA, I

=4mA*

=50mA, I

=4mA*

=100mA, V

=10V*

=20mA, V

=10V*

=30mA, V

=10V*

=10mA, V

=20V

f = 20MHz

=20V, f=1MHz

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