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BSS63-T3

Description
200 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size25KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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BSS63-T3 Overview

200 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BSS63-T3 Parametric

Parameter NameAttribute value
Maximum collector current0.2000 A
Maximum Collector-Emitter Voltage100 V
Number of terminals3
each_compliYes
EU RoHS regulationsYes
stateActive
structureSINGLE
Minimum DC amplification factor30
jesd_30_codeR-PDSO-G3
jesd_609_codee3
moisture_sensitivity_level1
Number of components1
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_260
larity_channel_typePNP
wer_dissipation_max__abs_0.3500 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountYES
terminal coatingMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Rated crossover frequency50 MHz
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
BSS63
C
B
E
ISSUE 2 – SEPTEMBER 95
7
COMPLIMENTARY TYPE —
PARTMARKING DETAIL —
BSS63 - T3
BSS63R - T6
BSS64
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
Static Forward Current
Transition Frequency
SYMBOL
V
(BR)
V
(BR)CEO
V
(BR)EBO
I
EBO
I
EBO
V
CE(sat)
V
BE(sat)
30
30
h
FE
f
T
50
Typ
85
MHz
MIN.
-110
-100
-6
-100
-50
-200
-250
-900
V
CEO
V
EBO
I
C
P
TOT
t
j
:t
stg
MAX.
V
CBO
SYMBOL
VALUE
-110
-100
-6
-100
330
-55 to +150
UNIT CONDITIONS.
V
V
V
nA
µ
A
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
I
C
=-10
µ
A
I
C
=-100
µ
A*
I
E
=-10
µ
A
V
CB
=-90V,
V
CB
=-90V,T
amb
=150
o
C
nA
mV
mV
V
EB
=-6V
I
C
=-25mA, I
B
=-2.5mA
I
C
=-25mA, I
B
=-2.5mA
I
C
=-10mA, V
CE
=-1V
I
C
=25mA, V
CE
=1V
V
CE
=-5V, I
C
=25mA
f=35 MHz
Output Capacitance
C
obo
Typ.
3
pF
V
CB
=-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
PAGE NUMBER

BSS63-T3 Related Products

BSS63-T3 BSS63 BSS63R-T6
Description 200 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR 200 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR 200 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3 3
Number of components 1 1 1
Maximum operating temperature 150 Cel 150 °C 150 Cel
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON
Maximum collector current 0.2000 A - 0.2000 A
Maximum Collector-Emitter Voltage 100 V - 100 V
each_compli Yes - Yes
EU RoHS regulations Yes - Yes
state Active - Active
structure SINGLE - SINGLE
Minimum DC amplification factor 30 - 30
jesd_30_code R-PDSO-G3 - R-PDSO-G3
jesd_609_code e3 - e3
moisture_sensitivity_level 1 - 1
Packaging Materials PLASTIC/EPOXY - PLASTIC/EPOXY
packaging shape RECTANGULAR - RECTANGULAR
Package Size SMALL OUTLINE - SMALL OUTLINE
eak_reflow_temperature__cel_ 260 - 260
larity_channel_type PNP - PNP
wer_dissipation_max__abs_ 0.3500 W - 0.3500 W
qualification_status COMMERCIAL - COMMERCIAL
sub_category Other Transistors - Other Transistors
terminal coating MATTE TIN - MATTE TIN
ime_peak_reflow_temperature_max__s_ 30 - 30
transistor applications SWITCHING - SWITCHING
Rated crossover frequency 50 MHz - 50 MHz

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