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BSS63

Description
200 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size25KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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BSS63 Overview

200 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BSS63 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.225 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)85 MHz
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
BSS63
C
B
E
ISSUE 2 – SEPTEMBER 95
7
COMPLIMENTARY TYPE —
PARTMARKING DETAIL —
BSS63 - T3
BSS63R - T6
BSS64
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
Static Forward Current
Transition Frequency
SYMBOL
V
(BR)
V
(BR)CEO
V
(BR)EBO
I
EBO
I
EBO
V
CE(sat)
V
BE(sat)
30
30
h
FE
f
T
50
Typ
85
MHz
MIN.
-110
-100
-6
-100
-50
-200
-250
-900
V
CEO
V
EBO
I
C
P
TOT
t
j
:t
stg
MAX.
V
CBO
SYMBOL
VALUE
-110
-100
-6
-100
330
-55 to +150
UNIT CONDITIONS.
V
V
V
nA
µ
A
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
I
C
=-10
µ
A
I
C
=-100
µ
A*
I
E
=-10
µ
A
V
CB
=-90V,
V
CB
=-90V,T
amb
=150
o
C
nA
mV
mV
V
EB
=-6V
I
C
=-25mA, I
B
=-2.5mA
I
C
=-25mA, I
B
=-2.5mA
I
C
=-10mA, V
CE
=-1V
I
C
=25mA, V
CE
=1V
V
CE
=-5V, I
C
=25mA
f=35 MHz
Output Capacitance
C
obo
Typ.
3
pF
V
CB
=-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
PAGE NUMBER

BSS63 Related Products

BSS63 BSS63-T3 BSS63R-T6
Description 200 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR 200 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR 200 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 Cel 150 Cel
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON
Maximum collector current - 0.2000 A 0.2000 A
Maximum Collector-Emitter Voltage - 100 V 100 V
each_compli - Yes Yes
EU RoHS regulations - Yes Yes
state - Active Active
structure - SINGLE SINGLE
Minimum DC amplification factor - 30 30
jesd_30_code - R-PDSO-G3 R-PDSO-G3
jesd_609_code - e3 e3
moisture_sensitivity_level - 1 1
Packaging Materials - PLASTIC/EPOXY PLASTIC/EPOXY
packaging shape - RECTANGULAR RECTANGULAR
Package Size - SMALL OUTLINE SMALL OUTLINE
eak_reflow_temperature__cel_ - 260 260
larity_channel_type - PNP PNP
wer_dissipation_max__abs_ - 0.3500 W 0.3500 W
qualification_status - COMMERCIAL COMMERCIAL
sub_category - Other Transistors Other Transistors
terminal coating - MATTE TIN MATTE TIN
ime_peak_reflow_temperature_max__s_ - 30 30
transistor applications - SWITCHING SWITCHING
Rated crossover frequency - 50 MHz 50 MHz
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