BSS65 datasheet, PDF - EEWORLD Datasheet

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BSS65: DescriptionSOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size26KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BSS65 Overview

SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR

BSS65 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	400 MHz
Maximum off time (toff)	90 ns
Maximum opening time (tons)	60 ns

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SOT23 PNP SILICON PLANAR

HIGH SPEED TRANSISTOR

BSS65

ISSUE 2 - SEPTEMBER 1995

BSS65 - L1

BSS65R - L5

PARTMARKING DETAIL

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

SYMBOL

MIN.

CEO

EBO

TOT

stg

TYP.

MAX.

(BR)CEO

(BR)CBO

(BR)EBO

Cut-Off Currents

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

CBO

EBO

CE(sat)

BE(sat)

Static Forward Current h

Transfer Ratio

Transition Frequency

Collector-Base

Capacitance

Emitter Base Capacitance

SYMBOL

CBO

VALUE

-12

-4

-200

-100

-50

330

-55 to +150

UNIT

CONDITIONS.

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

BreakdownVoltages

-12

-4

-100

-0.15

-0.25

-0.75

-0.82

obo

ebo

400

-0.98

-1.20

150

MHz

=-10mA

=-10

A *

=-10

=-6V, I

=-4V, I

=-10mA, I

=-1mA

=-30mA, I

=-3mA

=-10mA, I

=-1mA

=-30mA, I

=-3mA

=-10mA, V

=-0.3V

=-30mA, V

=-0.5V

=-30mA, V

=-10V,

f=100MHz

=-5V, I

=0,

f=1MHz

=-0.5V, I

=0, f=1MHz

Switching Times

Turn-On Time

Turn-Off Time

off

=-30mA

= -I

= -1.5mA

=-10V

PAGE NUMBER

BSS65 Related Products

	BSS65	BSS65-L1	BSS65R-L5
Description	SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR	SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR	SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR

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