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1N4151-GT3

Description
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size131KB,3 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

1N4151-GT3 Overview

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS PACKAGE-2

1N4151-GT3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-LALF-W2
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SENSITRON
SEMICONDUCTOR
Data Sheet 2770, Rev. -
1N4151
FAST SWITCHING DIODE
Features
!
!
!
!
Fast Switching Speed
Glass Package Version for High Reliability
High Conductance
Available in Both Through-Hole and Surface
Mount Versions
A
B
A
C
D
1N4151
Mechanical Data
!
!
!
!
!
Case: DO-35
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight:
DO-35
0.13 grams
Marking: Cathode Band Only
Dim
A
B
C
D
Min
DO-35
Max
Min
Max
25.40
4.00
0.60
2.00
in mm
1.000
0.157
0.024
0.079
In inch
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Rectified Current (Average), Half Wave Rectification with
Resistive Load and f
50MHz (Note 1)
Power Dissipation (Note 1)
Derate Above 25°C
Operating and Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
I
FM
I
O
P
d
T
j
, T
STG
Value
Unit
75
V
450
150
500
-65 to +200
mA
mA
mW
°C
Electrical Characteristics
Characteristic
Maximum Forward Voltage
Maximum Peak Reverse Current
Capacitance
Reverse Recovery Time
@T
A
=25°C unless otherwise specified
Symbol
V
FM
I
RM
C
j
t
rr
Min
Max
1.0
0.1
2.0
4.0
Unit
V
µA
pF
ns
Test Condition
I
F
= 50mA
V
R
= 50V
V
R
= 0, f = 1.0MHz
I
F
= 10mA to I
R
= 1.0mA
V
R
= 6.0V, R
L
= 100Ω
Note: 1. Diode on Ceramic Substrate 10mm x 8mm x 0.7mm.
221 West Industry Court
!
Deer Park, NY 11729-4681
!
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com

1N4151-GT3 Related Products

1N4151-GT3 1N4151-T3
Description Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS PACKAGE-2 Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS PACKAGE-2
Is it Rohs certified? conform to incompatible
package instruction O-LALF-W2 O-LALF-W2
Reach Compliance Code unknow unknow
Other features HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-35 DO-35
JESD-30 code O-LALF-W2 O-LALF-W2
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Maximum output current 0.15 A 0.15 A
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.5 W 0.5 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 75 V 75 V
Maximum reverse recovery time 0.004 µs 0.004 µs
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
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