ZXTN2007Z
30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
BV
CEO
= 30V : R
SAT
= 23m ; I
C
= 6.0A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 30V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
•
Extemely low equivalent on-resistance;
R
SAT
= 23m at 6.5A
•
6 amps continuous current
•
Up to 20 amps peak current
•
Very low saturation voltages
•
Excellent h
FE
characteristics up to 20 amps
SOT89
APPLICATIONS
•
DC - DC converters
•
MOSFET gate drivers
•
Charging circuits
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXTN2007ZTA
REEL
SIZE
7”
TAPE
WIDTH
12mm
embossed
QUANTITY PER
REEL
1000 units
PINOUT
DEVICE MARKING
849
TOP VIEW
ISSUE 1 - JUNE 2005
1
SEMICONDUCTORS
ZXTN2007Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Power dissipation at T
A
=25°C
Linear derating factor
(a)
(a)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
C
I
CM
P
D
P
D
T
j
, T
stg
LIMIT
80
30
7
6
20
1.5
12
2.1
16.8
-55 to +150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Operating and storage temperature range
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
SYMBOL
R
JA
R
JA
VALUE
83
60
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 1 - JUNE 2005
SEMICONDUCTORS
2
ZXTN2007Z
CHARACTERISTICS
ISSUE 1 - JUNE 2005
3
SEMICONDUCTORS
ZXTN2007Z
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R 1k
I
EBO
V
CE(SAT)
22
25
40
90
150
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
V
BE(SAT)
V
BE(ON)
h
FE
100
100
100
20
Transition frequency
Output capacitance
Switching times
f
T
C
OBO
t
ON
t
OFF
* Measured under pulsed conditions. Pulse width
1000
890
175
200
150
30
140
48
37
425
300 s; duty cycle
2%.
300
MIN.
80
80
30
7
TYP.
125
125
40
8.1
20
0.5
20
0.5
10
35
45
60
115
190
1100
1000
MAX. UNIT CONDITIONS
V
V
V
V
nA
A
nA
A
nA
mV
mV
mV
mV
mV
mV
mV
I
C
=100 A
I
C
=1 A, RB 1k
I
C
=10mA*
I
E
=100 A
V
CB
=70V
V
CB
=70V, T
amb
=100 C
V
CB
=70V
V
CB
=70V, T
amb
=100 C
V
EB
=6V
I
C
=0.5A, I
B
=20mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=20mA*
I
C
=2A, I
B
=20mA*
I
C
=6.5A, I
B
=300mA*
I
C
=6.5A, I
B
=300mA*
I
C
=6.5A, V
CE
=1V*
I
C
=10mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=1V*
MHz I
C
=100mA, V
CE
=10V
f=50MHz
pF
ns
V
CB
=10V, f=1MHz*
I
C
=1A, V
CC
=10V,
I
B1
=-I
B2
=100mA
ISSUE 1 - JUNE 2005
SEMICONDUCTORS
4
ZXTN2007Z
TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2005
5
SEMICONDUCTORS
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