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MGF0918A

Description
L & S BAND GaAs FET
CategoryDiscrete semiconductor    The transistor   
File Size45KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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MGF0918A Overview

L & S BAND GaAs FET

MGF0918A Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionCHIP CARRIER, R-CQCC-N3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage10 V
Maximum drain current (Abs) (ID)0.4 A
Maximum drain current (ID)0.15 A
FET technologyJUNCTION
highest frequency bandS BAND
JESD-30 codeR-CQCC-N3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeN-CHANNEL
Maximum power consumption environment3 W
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationQUAD
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0918A
L & S BAND GaAs FET
[ SMD non
matched ]
DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
High power gain
Gp=20dB(TYP.) @f=1.9GHz
High power added efficiency
ηadd=45%(TYP.)
@f=1.9GHz,Pin=8dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
Fig.1
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V
Ids=150mA
Rg=1kΩ
Delivery
-01:Tape
& Reel(1K),
-03:Trai(50pcs)
(Ta=25°C)
Absolute maximum ratings
Symbol
V
GSO
V
GDO
I
D
I
GR
I
GF
P
T
Tch
Tstg
Parameter
Gate to sourcebreakdown voltage
Gate to drain breakdown voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
-15
-15
400
-1.2
5.0
3
175
-65 to +175
Unit
V
V
mA
mA
mA
W
°C
°C
Electrical characteristics
Symbol
I
DSS
V
GS(off)
gm
Po
ηadd
G
LP
NF
Rth(ch-c)
(Ta=25°C)
Parameter
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Noise figure
Thermal Resistance *1
Test conditions
Min.
V
DS
=3V,V
GS
=0V
V
DS
=3V,I
D
=1.0mA
V
DS
=3V,I
D
=150mA
V
DS
=10V,I
D
=150mA,f=1.9GHz
Pin=8dBm
V
DS
=10V,I
D
=150mA,f=1.9GHz
∆Vf
Method
-
-1.0
-
25
-
18
-
-
Limits
Typ.
300
-
130
27
35
20
1.0
35
Max.
400
-5.0
-
-
-
-
-
50
Unit
mA
V
mS
dBm
%
dB
dB
°C/W
*1:
Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
June/2004

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