4.8 V OPERATION SILICON RF
POWER MOSFET FOR GSM1800 AND NE5500179A
GSM1900 TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER:
29.5 dBm TYP at V
DS
= 4.8 V, I
DQ
= 100 mA,
f = 1.9 GHz, P
IN
= 20 dBm
• HIGH POWER ADDED EFFICIENCY:
55% TYP at V
DS
= 4.8 V, I
DQ
= 100 mA,
f = 1.9 GHz, P
IN
= 20 dBm
• HIGH LINEAR GAIN:
14 dB TYP at V
DS
= 4.8 V, I
DQ
= 100 mA,
f = 1.9 GHz, P
IN
= 0 dBm
• SURFACE MOUNT PACKAGE:
5.7
x
5.7
x
1.1 mm MAX
• SINGLE SUPPLY:
3.0 to 6.0 V
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
4.2 Max
1.5
±
0.2
Source
Source
Gate
5.7 Max
0.6
±
0.15
Drain
0.8
±
0.15
4.4 Max
Gate
1.0 Max
Drain
1.2 Max
0.4
±
0.15
5.7 Max
0.9
±
0.2
0.2
±
0.1
0.8 Max
3.6
±
0.2
Bottom View
DESCRIPTION
The NE5500179A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
4.8 V GSM1800 and GSM1900 handsets. Dies are manufac-
tured using NEC's NEWMOS technology (NEC's 0.6
µm
WSi
gate lateral MOSFET) and housed in a surface mount pack-
age. This device can deliver 29.5 dBm output power with
55% power added efficiency at 1.9 GHz under the 4.8 V sup-
ply voltage, or can deliver 27 dBm output power with 50%
power added efficiency at 3.5 V by varying the gate voltage
as a power control function.
APPLICATIONS
• DIGITAL CELLULAR PHONES
• DIGITAL CORDLESS PHONES
• OTHERS
ELECTRICAL CHARACTERISTICS
(T
A
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
GSS
I
DSS
V
TH
gm
R
DS(ON)
BV
DSS
CHARACTERISTICS
Gate to Source Leakage Current
Drain to Source Leakage Current
Gate Threshold Voltage
Transconductance
Drain to Source On Resistance
Drain to Source Breakdown Voltage
= 25°C)
NE5500179A
79A
UNITS
nA
nA
V
S
-
V
MIN
-
-
1.0
-
-
20
TYP
-
-
1.35
0.41
1.00
24
MAX
100
100
2.0
-
-
-
TEST CONDITIONS
V
GSS
= 6.0 V
V
DSS
= 8.5 V
V
DS
= 4.8 V, I
DS
= 1 mA
V
DS
= 4.8 V, I
DS
1 = 150 mA, I
DS
2 = 250 mA
V
GS
= 6.0 V, V
DS
= 0.5 V
I
DSS
= 10 A
California Eastern Laboratories
NE5500179A
PERFORMANCE SPECIFICATIONS
(Peak measurement at Duty Cycle 1/8, 4.6 mS period, T
A
= 25˚C)
SYMBOLS
G
L
P
OUT
I
OP
CHARACTERISTICS
Linear Gain
Output Power
Operating Current
Power Added Efficiency
Linear Gain
Output Power
Operating Current
Power Added Efficiency
Maximum Output Power
Operating Current
Linear Gain
Output Power
Operating Current
Power Added Efficiency
Maximum Output Power
Operating Current
Linear Gain
Output Power
Operating Current
Power Added Efficiency
UNITS
dB
dBm
mA
%
dB
dBm
mA
%
dBm
mA
dB
dBm
mA
%
dBm
mA
dB
dBm
mA
%
MIN
—
—
—
—
—
—
—
—
—
—
—
28.5
—
47
—
—
—
—
—
—
TYP
13.0
24.5
170
50
13.5
26.5
210
52
27.0
260
14.0
29.5
300
55
30.0
350
14.5
31.5
380
55
—
—
—
—
—
—
—
—
—
—
—
—
f = 1.9 GHz, P
IN
= 20 dBm
V
DS
= 4.8 V, V
GS
= 2.5 V
f = 1.9 GHz, P
IN
= 0 dBm,
V
DS
=6.0 V, I
DQ
= 100 mA
P
OUT
I
OP
f = 1.9 GHz, P
IN
= 22 dBm,
V
DS
=6.0 V, I
DQ
= 100 mA
f = 1.9 GHz, P
IN
= 18 dBm
V
DS
= 3.5 V, V
GS
= 2.5 V
f = 1.9 GHz, P
IN
= 0 dBm,
V
DS
= 4.8 V, I
DQ
= 100 mA
P
OUT(1)
I
OP(1)
f = 1.9 GHz, P
IN
= 20 dBm,
V
DS
= 4.8 V, I
DQ
= 100 mA
—
—
—
f = 1.9 GHz, P
IN
= 0 dBm,
V
DS
= 3.5 V, I
DQ
= 100 mA
P
OUT(1)
I
OP(1)
f = 1.9 GHz, P
IN
= 18 dBm,
V
DS
= 3.5 V, I
DQ
= 100 mA
MAX
—
—
—
TEST CONDITIONS
f = 1.9 GHz, P
IN
= 0 dBm,
V
DS
= 3.0 V, I
DQ
= 100 mA
f = 1.9 GHz, P
IN
= 15 dBm,
V
DS
= 3.0 V, I
DQ
= 100 mA
η
ADD
G
L
η
ADD
P
OUT(2)
I
OP(2)
G
L
η
ADD
P
OUT(2)
I
OP(2)
G
L
η
ADD
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°C)
SYMBOLS
V
DS
V
GS
I
D
I
D
P
IN
P
T
T
CH
T
STG
PARAMETERS
Drain Supply Voltage
Gate Supply Voltage
Drain Current
Drain Current (Pulse Test)
2
Input Power
3
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
A
A
dBm
W
°C
°C
RATINGS
8.5
6
0.25
0.5
25
1.6
125
-55 to +125
ORDERING INFORMATION
1
PART NUMBER
NE5500179A-T1
QTY
1 Kpcs/Reel
Note:
1. Embossed tape 12 mm wide. Gate pin faces perforation side of
the tape.
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, T
ON
= L
MS
.
3. Frequency = 1.9 GHz, V
DS
= 4.8 V.
RECOMMENDED OPERATING CONDITIONS
SYMBOLS
V
DS
V
GS
I
D
P
IN
f
T
OP
PARAMETERS
Drain Supply Voltage
Gate Supply Voltage
Drain Current (Pulse Test)
Input Power
Operating Frequency Range
Operating Temperature
Duty Cycle 50%, Ton1ms
Frequency = 1.9 GHz, V
DS
= 4.8 V
TEST CONDITIONS
UNITS
V
V
A
dBm
GHz
˚C
MIN
3.0
0
—
21
1.6
-30
TYP
3.5
2.0
—
22
—
25
MAX
6.0
2.5
0.5
23
2.5
85
NE5500179A
TYPICAL PERFORMANCE CURVES
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
3.0
V
GS
MAX = 10 V
Step = 1.0 V
1000
V
DS
= 4.8 V
(T
A
= 25°C)
QUIESCENT DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
2.5
Quiescent Drain Current, I
DQ
(mA)
6
8
10
12
14
16
Drain Current, I
DS
(A)
100
2.0
1.5
10
1.0
1
0.5
0.0
0
2
4
0.1
1.0
1.5
2.0
2.5
3.0
Drain to Source Voltage, V
DS
(V)
Gate to Source Voltage, V
GS
(V)
Efficiency/Power Added Efficiency,
η, η
ADD
(%)
Drain Current, I
DS
(mA)
V
DS
= 4.8 V
I
DQ
= 100 mA
f = 1.9 GHz
P
O
= 29.8 dBm
400
P
OUT
V
DS
= 4.8 V
f = 1.9 GHz
P
IN
= 20 dBm
P
MAX
= 30.1 dBm
400
P
OUT
I
DS
Output Power, P
OUT
(dBm)
30
Output Power, P
OUT
(dBm)
30
25
I
D
20
300
29
300
200
100
28
200
η
15
η
27
η
ADD
100
50
η
ADD
26
0.0
1.0
APC
2.0
3.0
4.0
100
10
0
5
10
15
20
25
0
0
0
Input Power, P
IN
(dBm)
Gate to Source Voltage, V
GS
(V)
Efficiency/Power Added Efficiency,
η, η
ADD
(%)
30
Drain Current, I
DS
(mA)
Output Power, P
OUT
(dBm)
Output Power, P
OUT
(dBm)
V
DS
= 3.5 V
I
DQ
= 100 mA
f = 1.9 GHz
500
P
O
= 26.8 dBm
28
V
DS
= 3.5 V
f = 1.9 GHz
P
IN
= 18 dBm
P
MAX
= 27.2 dBm
400
P
OUT
25
P
OUT
20
I
D
15
400
27
300
26
I
DS
25
300
200
100
200
η
10
100
50
η
24
100
50
η
ADD
5
0
5
10
15
20
25
0
0
η
ADD
APC
23
0.0
1.0
2.0
3.0
0
4.0
0
Input Power, P
IN
(dBm)
Gate to Source Voltage, V
GS
(V)
Drain Current, I
DS
(mA)
100
500
Efficiency/Power Added Efficiency,
η, η
ADD
(%)
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY AND POWER ADDED
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY
AND POWER ADDED EFFICIENCY vs.
GATE TO SOURCE VOLTAGE
Drain Current, I
DS
(mA)
100
50
0
35
500
31
500
Efficiency/Power Added Efficiency,
η, η
ADD
(%)
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY AND POWER ADDED
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY
AND POWER ADDED EFFICIENCY vs.
GATE TO SOURCE VOLTAGE
NE5500179A
TYPICAL SCATTERING PARAMETERS
(T
A
= 25°C)
NE5500179A
V
DS
= 4.8 V, I
DS
= 100 mA
FREQUENCY
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
S
11
MAG
0.884
0.792
0.757
0.747
0.746
0.751
0.756
0.772
0.777
0.785
0.796
0.804
0.814
0.820
0.827
0.832
0.833
0.846
0.843
0.850
0.851
0.854
0.861
0.857
0.870
0.870
0.867
0.870
0.873
0.882
ANG
-69.6
-107.8
-127.4
-138.7
-146.2
-151.8
-155.6
-159.5
-162.3
-165.0
-167.7
-169.9
-172.4
-174.6
-176.8
-179.6
177.9
175.6
172.9
170.3
167.1
165.1
162.3
159.5
156.6
153.9
151.6
148.9
146.5
143.9
MAG
18.11
12.12
8.58
6.58
5.28
4.32
3.68
3.12
2.75
2.40
2.17
1.91
1.74
1.58
1.45
1.33
1.19
1.13
1.02
0.99
0.89
0.83
0.75
0.76
0.67
0.65
0.56
0.57
0.52
0.51
S
21
ANG
135.5
112.3
98.8
89.4
82.1
76.2
70.9
65.9
61.3
58.2
53.7
51.4
46.4
44.3
39.7
38.4
34.6
31.6
28.3
27.1
23.3
21.4
16.9
15.5
13.8
12.0
9.0
3.9
4.7
2.7
MAG
0.037
0.049
0.052
0.052
0.052
0.050
0.048
0.048
0.045
0.043
0.040
0.038
0.036
0.035
0.035
0.031
0.030
0.028
0.025
0.024
0.021
0.019
0.017
0.017
0.015
0.016
0.010
0.010
0.007
0.008
S
12
ANG
48.2
23.2
10.8
3.3
-4.1
-8.9
-12.6
-17.0
-22.1
-21.9
-26.9
-29.2
-30.5
-31.4
-36.6
-38.5
-38.3
-38.7
-38.1
-40.9
-42.9
-48.0
-43.6
-40.8
-49.0
-36.8
-33.0
-43.4
-18.3
-15.0
MAG
0.517
0.569
0.598
0.618
0.641
0.660
0.681
0.696
0.715
0.732
0.749
0.763
0.776
0.789
0.803
0.808
0.814
0.829
0.834
0.840
0.842
0.847
0.856
0.866
0.862
0.865
0.866
0.879
0.879
0.885
S
22
ANG
-85.0
-120.7
-136.5
-144.8
-149.8
-153.4
-156.2
-158.9
-161.0
-162.9
-164.9
-166.9
-169.1
-171.0
-172.7
-175.0
-176.7
-179.2
178.7
176.5
174.4
172.1
169.1
167.0
164.7
162.0
159.1
156.7
154.5
152.0
K
0.00
0.06
0.08
0.11
0.13
0.18
0.22
0.23
0.28
0.33
0.35
0.42
0.45
0.48
0.44
0.62
0.78
0.70
0.98
0.97
1.42
1.62
1.88
1.68
2.20
2.13
4.44
3.96
6.01
4.60
MAG
1
(dB)
26.8
23.9
22.1
21.0
20.1
19.3
18.8
18.1
17.9
17.4
17.2
17.0
16.8
16.5
16.1
16.3
16.0
16.1
16.0
16.1
12.4
11.7
10.9
11.5
10.2
10.1
7.8
8.6
7.6
8.2
(
K –
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE5500179A
RECOMMENDED P.C.B. LAYOUT
(Units in mm)
4.0
1.7
Drain
Gate
5.9
1.2
Source
0.5
6.1
0.5
0.5
Through hole
φ
0.2
×
33
EXCLUSIVE NORTH AMERICAN AGENT FOR
1.0
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
•
Headquarters
•
4590 Patrick Henry Drive
•
Santa Clara, CA 95054-1817
•
(408) 988-3500
•
Telex 34-6393
•
FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only)
•
Internet: http://WWW.CEL.COM
07/05/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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