MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS2
0.2+/-0.05
(0.22)
(0.22)
(0.25)
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS2 is a MOS FET type transistor
specifically designed for VHF/UHF RF po
-wer amplifiers applications.
This device have an interal monolithic zener
diode from gate to source for ESD protection.
OUTLINE
DRAWING
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
6.0+/-0.15
1
4.9+/-0.15
1.0+/-0.05
2
FEATURES
•High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz,520MHz
•High Efficiency:65%typ.(175MHz)
•High Efficiency:65%typ.(520MHz)
•Integrated gate protection diode
3
(0.25)
INDEX MARK
(Gate)
0.2+/-0.05
0.9+/-0.1
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD02MUS2-101,T112 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD02MUS2
MITSUBISHI ELECTRIC
1/9
17 Jan. 2006
3.5+/-0.05
2.0+/-0.05
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS2
UNIT
V
V
W
W
A
°C
°C
°C/W
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Junction temperature
Storage temperature
Thermal resisitance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
Ω
-
-
-
Junction to case
RATINGS
30
-5/+10
21.9
0.1
1.5
150
-40 to +125
5.7
D
G
S
SCHEMATIC DRAWING
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
th
Pout1
η
D1
Pout2
η
D2
PARAMETER
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=7.2V, Pin=50mW,
f=175MHz Idq=200mA
V
DD
=7.2V, Pin=50mW,
f=520MHz Idq=200mA
V
DD
=9.2V,Po=2W(Pin Control)
f=175MHz,Idq=200mA,Zg=50
Ω
Load VSWR=20:1(All Phase)
V
DD
=9.2V,Po=2W(Pin Control)
f=520MHz,Idq=200mA,Zg=50
Ω
Load VSWR=20:1(All Phase)
MIN
-
-
1
2
55
2
50
LIMITS
TYP MAX.
-
100
-
1
1.8
3
3
-
65
-
3
-
65
-
No destroy
-
No destroy
UNIT
uA
uA
V
W
%
W
%
-
Zero gate Voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
Load VSWR tolerance
Load VSWR tolerance
Note : Above parameters , ratings , limits and conditions are subject to change.
RD02MUS2
MITSUBISHI ELECTRIC
2/9
17 Jan. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS2
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
25
CHANNEL DISSIPATION
Pch(W)
20
15
10
5
0
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
Vgs-Ids CHARACTERISTICS
6
5
4
Ids(A)
Ta=+25°C
Vds=7.2V
On PCB(*1) with Heat-sink
3
2
On PCB(*1)
1
0
0
40
80
120 160 200
AMBIENT TEMPERATURE Ta(°C)
0
2
4
6
Vgs(V)
8
10
Vds-Ids CHARACTERISTICS
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
2
4
6
Vds(V)
8
10
Ta=+25°C
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vds VS. Ciss CHARACTERISTICS
40
Ta=+25°C
f=1MHz
30
Ciss(pF)
20
10
0
0
5
10
Vds(V)
15
20
Ids(A)
Vgs=5V
Vgs=4V
Vgs=3V
Vds VS. Coss CHARACTERISTICS
40
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
6
5
Crss(pF)
4
3
2
1
Ta=+25°C
f=1MHz
30
Coss(pF)
20
10
0
0
5
10
Vds(V)
15
20
0
5
10
Vds(V)
15
20
0
RD02MUS2
MITSUBISHI ELECTRIC
3/9
17 Jan. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS2
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
@f=175MHz
40
35
Po(dBm) , Gp(dB) ,
Idd(A)
30
25
20
15
10
5
0
-10
-5
0
5 10
Pin(dBm)
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=200mA
Gp
Po
η½
Pin-Po CHARACTERISTICS
@f=175MHz
100
90
70
60
50
40
30
20
0.0
0
20
40
60
Pin(mW)
80
20
100
Pout(W) , Idd(A)
80
ηd(%)
3.0
ηd
4.0
Po
100
80
60
40
ηd(%)
Idd(A)
17 Jan. 2006
2.0
1.0
Idd
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=200mA
15
20
Pin-Po CHARACTERISTICS
@f=520MHz
40
35
Po(dBm) , Gp(dB) ,
Idd(A)
30
25
20
15
10
5
0
-10
-5
0
5 10
Pin(dBm)
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=200mA
Gp
η½
Po
Pin-Po CHARACTERISTICS
@f=520MHz
100
90
70
60
50
40
30
20
0.0
0
20
40
60
Pin(mW)
80
20
100
Pout(W) , Idd(A)
80
ηd(%)
3.0
2.0
1.0
ηd
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=200mA
4.0
Po
100
80
60
40
ηd(%)
Idd
15
20
Vdd-Po CHARACTERISTICS
@f=175MHz
7
6
5
Po(W)
4
3
2
1
0
2
4
6
8
Vdd(V)
10
12
Idd
Ta=25°C
f=175MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
Po
Vdd-Po CHARACTERISTICS
@f=520MHz
1.4
1.2
1.0
Idd(A)
Po(W)
0.8
0.6
0.4
0.2
0.0
7
6
5
4
3
2
1
0
2
4
6
8
Vdd(V)
10
12
Ta=25°C
f=520MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
Po
1.4
1.2
1.0
Idd
0.8
0.6
0.4
0.2
0.0
RD02MUS2
MITSUBISHI ELECTRIC
4/9
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS2
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTORISTICS 2
4
Vds=10V
Tc=-25~+75°C
-25°C
+25°C
3
Ids(A),GM(S)
2
+75°C
1
0
2
3
4
Vgs(V)
5
6
RD02MUS2
MITSUBISHI ELECTRIC
5/9
17 Jan. 2006
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