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HVD133A

Description
30 V, SILICON, PIN DIODE
CategoryDiscrete semiconductor    diode   
File Size60KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

HVD133A Overview

30 V, SILICON, PIN DIODE

HVD133A Parametric

Parameter NameAttribute value
package instructionSFP-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
applicationSWITCHING
Minimum breakdown voltage30 V
ConfigurationSINGLE
Maximum diode capacitance1 pF
Diode component materialsSILICON
Maximum diode forward resistance0.7 Ω
Diode resistance test current2 mA
Diode resistance test frequency100 MHz
Diode typePIN DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.15 W
Certification statusNot Qualified
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
HVD133A
Silicon Epitaxial Planar Pin Diode for
Antenna Switching
REJ03G0171-0100Z
Rev.1.00
Jan.21.2004
Features
An optimal solution for antenna switching in mobile phones.
Low capacitance. (C1 = 1.0 pF max)
Low forward resistance. (rf = 0.7
max)
Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No.
HVD133A
Laser Mark
T9
Package Code
SFP
Pin Arrangement
Cathode mark
Mark
1
T9
2
1. Cathode
2. Anode
Rev.1.00, Jan.21.2004, page 1 of 4

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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