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MAAMGM0007-DIE

Description
2.0-18.0 GHz Distributed Amp/Gain Block
CategoryWireless rf/communication    Radio frequency and microwave   
File Size316KB,6 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric View All

MAAMGM0007-DIE Overview

2.0-18.0 GHz Distributed Amp/Gain Block

MAAMGM0007-DIE Parametric

Parameter NameAttribute value
MakerMACOM
package instructionDIE OR CHIP
Reach Compliance Codecompli
Number of functions1
Encapsulate equivalent codeDIE OR CHIP
power supply5 V
technologyGAAS
Preliminary Datasheet
RO-P-DS-3084 A
2.0-18.0 GHz Distributed Amp/Gain Block
MAAMGM0007-DIE
MAAMGM0007-DIE
Features
0.15 Watt Saturated Output Power Level
Single Bias Operation
Variable Drain Voltage (4-6V) Operation
GaAs MSAG™ Process
Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAMGM0007-Die is a single stage distributed amplifier
with single bias operation. This product is fully matched to 50
ohms on both the input and output. It can be used as a driver
stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate MESFET
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manu-
facturing processes, planar processing of ion implanted transis-
tors, multiple implant capability enabling power, low-noise, switch
and digital FETs on a single chip, and polyimide scratch protec-
tion for ease of use with automated manufacturing processes.
The use of refractory metals and the absence of platinum in the
gate metal formulation prevents hydrogen poisoning when em-
ployed in hermetic packaging.
Primary Applications
Test Equipment
Electronic Warfare
Radar
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50Ω, V
DD
= 5V, P
in
= 16 dBm
Parameter
Bandwidth
Output Power
1-dB Compression Point
Small Signal Gain
Noise Figure
Input VSWR
Output VSWR
Drain Supply Current
Symbol
f
P
OUT
P
1dB
G
NF
VSWR
VSWR
I
DD
Typical
2.0-18.0
22
19
8
6
2.0:1
2.0:1
< 250
mA
Units
GHz
dBm
dBm
dB
dB
1.
T
B
= MMIC Base Temperature
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