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DTB743XE

Description
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
File Size43KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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DTB743XE Overview

-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

DTB743XE / DTB743XM
Transistors
-200mA / -30V Low V
CE
(sat) Digital transistors
(with built-in resistors)
DTB743XE / DTB743XM
Applications
Inverter, Interface, Driver
Feature
1) V
CE(sat)
is lower than the conventional products.
2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for
operation, making the device design easy.
Structure
PNP epitaxial plannar silicon transistor
(Resistor built-in type)
External dimensions
(Unit : mm)
DTB743XE
1.6
0.3
(3)
0.8
1.6
0.7
0.55
0.2
0.5 0.5
0.2
0.15
0.1Min.
(2)
(1)
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
1.0
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : M33
DTB743XM
0.2
0.8
1.2
1.2
0.32
(3)
0.2
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
(1) IN
(2) GND
(3) OUT
VMT3
Each lead has same dimensions
Abbreviated symbol : M33
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1
∗2
Packaging specifications
Limits
Package
Unit
V
V
mA
mW
C
C
EMT3
Taping
VMT3
Taping
Symbol
V
CC
V
IN
I
C (max)
P
D
Tj
Tstg
DTB743XE DTB743XM
−30
−20
to
+7
−200
150
150
−55
to
+150
Packaging type
Code
TL
3000
T2L
8000
Part No.
DTB743XE
DTB743XM
Basic ordering
unit (pieces)
∗1
Characteristics of built-in transistor.
∗2
Each terminal mounted on a recommended land.
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Characteristics of built-in transistor.
Equivalent circuit
Max.
−0.3
−300
−1.4
−0.5
6.11
2.6
Unit
V
mV
mA
µA
MHz
kΩ
Conditions
V
CC
=
5V, I
O
=
−100µA
V
O
=
−0.3V,
I
O
=
−20mA
I
O
/I
I
=
−50mA
/
−2.5mA
V
I
=
−5V
V
CC
=
−30V,
V
I
=0V
V
O
=
−2V,
I
O
=
−100mA
V
CE
=
−10V,
I
E
=5mA, f=100MHz
IN
GND(+)
OUT
R
1
IN
R
2
GND(+)
OUT
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R
2
/R
1
Min.
−2.5
140
3.29
1.7
Typ.
−70
260
4.7
2.1
R
1
=4.7kΩ / R
2
=10kΩ
1/1

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