C-BAND MEDIUM POWER GaAs MESFET NE8500100
NE8500199
FEATURES
• HIGH OUTPUT POWER:
1 W
• HIGH LINEAR GAIN:
9.0 dB
• HIGH EFFICIENCY:
37% (PAE)
• INDUSTRY STANDARD PACKAGING
• THIS DEVICE IS ALSO AVAILABLE AS A
TWO-CELL CHIP: NE8500100
ABSOLUTE MAXIMUM RATINGS
1
(T
C
= 25
°C
unless otherwise noted)
SYMBOLS
V
DS
V
GD
V
GS
I
DS
I
GS
P
T
T
CH
T
STG
PARAMETERS
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
V
A
mA
W
°C
°C
RATINGS
15
-18
-12
IDSS
6.0
6.0
175
-65 to +175
DESCRIPTION
The NE8500199 is a medium power GaAs MESFET designed
for up to a 1W output stage or as a driver for higher power
devices. The device has no internal matching and can be
used at frequencies from UHF to 8.5 GH
Z
. The device is
available in the “99” package or in chip form. The chip is a two-
cell die; bonding both cells delivers the rated performance.
The NE850 Series Transistors are manufactured to NEC's
stringent quality assurance standards to ensure highest reli-
ability and consistent superior performance.
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
RECOMMENDED OPERATING LIMITS
SYMBOLS
V
DS
T
CH
G
COMP
R
G
PARAMETERS
Drain to Source Voltage
Channel Temperature
Gain Compression
Gate Resistance
UNITS MIN
V
°C
dB
KΩ
1
9
TYP MAX
10
130
3.0
4
ELECTRICAL CHARACTERISTICS
(T
C
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
P
OUT
G
L
CHARACTERISTICS
Power Out at Fixed Input Power
Linear Gain
Collector Efficiency
Drain Source Current
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
= 25°C)
NE8500199
NE8500100
00 (Chip), 99
UNITS
dBm
dB
%
mA
mA
V
mS
°C/W
330
-3.0
300
60
MIN
28.5
TYP
29.5
9.0
37
200
825
-1.0
MAX
TEST CONDITIONS
P
IN
= 21.0 dBm
f = 7.2 GHz
V
DS
= 10 V; I
DSQ
= 200 mA
R
G
= 1KΩ
V
DS
= 2.5 V; V
GS
= 0 V
V
DS
= 2.5 V; I
DS
= 4 mA
V
DS
= 2.5 V; I
DS
= I
DSS
Channel to Case
Functional
Characteristics
η
ADD
I
DS
Electrical DC
Characteristics
I
DSS
V
P
g
m
R
TH
California Eastern Laboratories
NE8500100, NE8500199
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°C)
j
50
j
25
S
11
10.1 GHz
j
10
S
22
10.1 GHz
0
+90˚
j
100
+120˚
+60˚
+150˚
S
21
0.1 GHz
±180˚
S
11
0.1 GHz
S
12
0.1 GHz S
21
10.1 GHz
S
12
10.1 GHz
+30˚
S
22
0.1 GHz
0˚
-j
10
-150˚
-30˚
-j
25
-j
50
-j
100
-120˚
-90˚
-60˚
S
21
MAG:
4.0 / DIV., 20.0 FS
S
12
MAG:
0.03 / DIV., 0.15 FS
NE 8500100 (2 Cells)
V
DS
= 10 V, I
DS
= 200 mA
FREQUENCY
GHZ
0.10
0.20
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
MAG
0.990
0.981
0.933
0.884
0.865
0.859
0.850
0.850
0.850
0.852
0.853
0.854
0.854
0.854
0.854
0.850
0.842
0.839
0.836
0.833
0.834
0.832
S
11
ANG
-18.400
-36.000
-78.900
-120.400
-142.100
-155.700
-164.900
-172.000
-178.000
176.900
172.600
168.400
164.500
161.000
157.500
153.800
150.700
147.700
144.600
141.500
138.200
134.900
MAG
13.477
12.933
10.387
6.899
4.970
3.842
3.083
2.554
2.224
1.942
1.704
1.501
1.383
1.256
1.133
1.048
0.968
0.877
0.811
0.774
0.723
0.657
S
21
ANG
168.400
158.100
132.500
106.600
90.700
79.200
69.600
60.300
52.100
45.400
38.600
29.500
22.900
18.200
11.900
3.800
-0.400
-4.800
-11.800
-17.600
-21.500
-25.600
MAG
0.008
0.013
0.026
0.036
0.040
0.041
0.043
0.045
0.049
0.052
0.057
0.060
0.064
0.070
0.077
0.077
0.078
0.085
0.093
0.102
0.111
0.118
S
12
ANG
74.200
72.500
53.300
37.500
30.700
28.100
31.000
32.300
33.400
33.100
35.700
34.900
35.800
36.000
34.300
30.300
33.300
35.700
34.200
32.400
29.100
25.500
MAG
0.122
0.131
0.171
0.210
0.235
0.258
0.278
0.302
0.330
0.355
0.382
0.409
0.433
0.457
0.481
0.502
0.521
0.546
0.568
0.592
0.613
0.633
S
22
ANG
-27.200
-49.100
-92.100
-121.500
-132.500
-138.400
-141.400
-144.100
-146.900
-149.800
-152.700
-156.300
-160.000
-163.600
-167.400
-171.600
-175.000
-178.400
177.800
174.100
170.300
166.400
0.107
0.102
0.209
0.378
0.533
0.689
0.871
0.985
1.010
1.048
1.056
1.083
1.070
1.048
1.007
1.063
1.204
1.213
1.152
1.046
0.962
0.954
K
MAG
1
(dB)
32.265
29.978
26.015
22.825
20.943
19.718
18.555
17.540
15.948
14.384
13.303
12.227
11.727
11.197
11.166
9.803
8.207
7.348
7.037
7.486
8.138
7.457
S-Parameters include 0.0010" (24.5
µm)
gold bond wires as follows:
Gate, 2 wires, 1 per bond pad, 0.0265" (674µm) long each wire
Drain, 2 wires, 1 per bond pad, 0.0232" (590
µm)
long each wire
Source, 4 wires, 2 per side, 0.0092" (234
µm)
long each wire
OUTLINE DIMENSIONS
PACKAGE OUTLINE 99
(Units in mm)
5.2±0.3
1.0±0.1
4.0 MIN BOTH LEADS
Gate
φ2.2±0.2
D
D
125
780
290
170
CHIP (00)
(Units in
µm)
4.3±0.2
Source
Drain
0.6±0.1
5.2±0.3
11.0±0.15
15.0±0.3
4.0±0.1
640
+.06
0.1 -.02
0.2 MAX
1.7±0.15
S
G
G
100
5.0 MAX
6.0±0.2
100
1.2
Die Thickness 140
NE8500100, NE8500199
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°C)
j
50
j
25
S
11
10.1 GHz
j
100
+120˚
+90˚
+60˚
j
10
S
22
10.1 GHz
0
+150˚
+30˚
S
22
0.1 GHz
S
11
0.1 GHz
±180˚
S
21
0.1 GHz
S12
0.1 GHz
S
21
10.1 GHz
S
12
10.1 GHz
0˚
-j
10
-150˚
-30˚
-j
25
-j
50
-j
100
-120˚
-90˚
-60˚
S
21
MAG:
2.0 / DIV., 10.0 FS
S
12
MAG:
0.02 / DIV., 0.1 FS
NE 8500100 (1 Cell)
V
DS
= 10 V, I
DS
= 100 mA
FREQUENCY
GHZ
0.10
0.20
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
MAG
1.000
0.995
0.970
0.915
0.868
0.839
0.813
0.803
0.798
0.797
0.796
0.798
0.799
0.801
0.803
0.804
0.800
0.800
0.802
0.805
0.811
0.816
S
11
ANG
-8.800
-17.500
-42.300
-77.700
-104.800
-125.600
-141.500
-154.500
-165.700
-175.300
176.400
168.800
161.700
155.400
149.400
143.500
138.300
133.800
129.300
125.000
120.800
116.800
MAG
9.587
9.496
8.950
7.570
6.243
5.191
4.347
3.724
3.284
2.894
2.564
2.308
2.115
1.912
1.729
1.611
1.478
1.342
1.247
1.182
1.099
1.004
S
21
ANG
173.800
168.200
151.600
128.200
109.800
95.300
83.100
71.700
61.900
53.300
44.800
34.800
27.100
20.500
12.700
4.100
-1.900
-8.200
-16.200
-23.200
-29.200
-35.200
MAG
0.005
0.008
0.020
0.034
0.042
0.047
0.050
0.052
0.054
0.056
0.057
0.059
0.061
0.064
0.067
0.070
0.068
0.070
0.075
0.081
0.086
0.092
S
12
ANG
88.900
83.000
69.500
53.100
42.600
34.000
29.400
26.000
23.200
21.200
20.500
18.200
17.800
17.900
15.900
11.500
10.700
12.600
11.900
10.000
6.900
2.800
MAG
0.396
0.393
0.377
0.338
0.302
0.274
0.256
0.246
0.243
0.243
0.247
0.253
0.260
0.272
0.284
0.296
0.305
0.323
0.344
0.366
0.390
0.414
S
22
ANG
-4.900
-8.700
-19.900
-35.800
-48.400
-59.000
-67.500
-76.600
-85.900
-95.000
-104.000
-113.200
-122.000
-130.800
-139.300
-148.700
-156.000
-163.400
-171.400
-179.300
172.500
164.300
K
-0.020
0.043
0.147
0.279
0.406
0.524
0.675
0.789
0.874
0.953
1.055
1.115
1.164
1.206
1.251
1.264
1.456
1.549
1.511
1.418
1.357
1.312
MAG
1
(dB)
32.827
30.745
26.508
23.476
21.721
20.432
19.392
18.550
17.840
17.133
15.097
13.864
12.943
12.013
11.101
10.528
9.366
8.462
7.988
7.798
7.498
7.030
S-parameters include 0.0010" (25.4
µm)
gold bond wires as follows:
Gate, 1 wire, 1 per bond pad, 0.0245" (619
µm)
long each wire
Drain, 1 wire, 1 per bond pad, 0.0248" (631
µm)
long each wire
Source, 2 wires, 2 per side, 0.0090" (229
µm)
long each wire
Note:
1. Gain calculations:
MAG =
|S
21
|
|S
12
|
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE8500199 LARGE SIGNAL IMPEDANCES
FREQ (GHz)
5.90
6.20
6.40
6.50
Z
IN
(ohm)
7.08 - j 20.24
8.37 - j 23.28
16.11 - j 41.46
9.30 - j 11.82
Z
OUT
(ohm)
15.95 - j 5.70
15.36 - j 8.11
18.87 - j 19.33
23.53 + j 3.06
Z
IN
is the impedance of the input matching circuit as seen by the gate.
Z
OUT
is the impedance of the output matching circuit as seen by the drain.
NE8500100, NE8500199
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°)
j
50
j
25
j
100
+90˚
+120˚
+60˚
j
10
S
22
10.0 GHz
+150˚
S
21
0.1 GHz
S
12
0.1 GHz
+30˚
0
±180˚
S
22
0.1 GHz
S
11
0.1 GHz
0˚
S
21
10 GHz
-j
10
S
11
10.0 GHz
-j
25
-j
50
-j
100
-150˚
S
12
10 GHz
-120˚
-90˚
-60˚
-30˚
S21 MAG:
3.0 / DIV., 15.0 FS
S12 MAG:
0.06 / DIV., 0.30 FS
NE 8500199
V
DS
= 10 V, I
DS
= 200 mA
FREQUENCY
GHZ
0.10
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
Note:
1. Gain calculations:
MAG =
|S
21
|
|S
12
|
S
11
MAG
0.990
0.916
0.869
0.851
0.840
0.831
0.826
0.824
0.829
0.803
0.784
0.767
0.751
0.726
0.689
0.649
0.604
0.577
0.571
0.611
0.631
ANG
-22.700
-91.100
-132.100
-152.900
-166.100
-175.900
176.000
168.800
161.000
152.500
144.700
135.900
125.800
114.100
100.200
83.400
63.200
37.000
5.900
-28.500
-62.900
MAG
14.418
10.211
6.444
4.610
3.591
2.975
2.601
2.341
2.127
1.963
1.929
1.916
1.928
1.951
1.957
2.013
2.067
2.102
2.072
2.030
1.812
S
21
ANG
165.500
123.300
94.800
76.600
61.900
49.100
37.300
26.000
13.400
3.400
-8.600
-20.700
-33.500
-47.200
-62.400
-78.800
-96.600
-115.500
-135.700
-157.900
177.300
MAG
0.007
0.024
0.031
0.034
0.038
0.042
0.047
0.053
0.066
0.075
0.084
0.097
0.113
0.130
0.149
0.177
0.206
0.232
0.253
0.277
0.280
S
12
ANG
70.100
47.700
33.600
29.000
28.100
26.700
25.400
27.400
25.400
15.200
9.300
3.100
-4.800
-13.200
-23.900
-36.800
-51.800
-68.000
-84.700
-103.200
-123.600
MAG
0.065
0.175
0.221
0.241
0.260
0.278
0.296
0.313
0.345
0.337
0.340
0.358
0.381
0.396
0.402
0.431
0.465
0.500
0.534
0.577
0.587
S
22
ANG
-64.600
-126.400
-149.100
-159.200
-165.600
-170.800
-174.600
-177.800
176.300
166.200
159.800
154.200
149.500
144.200
137.100
129.400
117.200
102.700
87.200
69.700
47.000
K
MAG
1
(dB)
0.097
0.300
0.558
0.797
0.970
1.098
1.129
1.109
0.915
1.007
0.984
0.891
0.767
0.697
0.678
0.601
0.557
0.526
0.512
0.464
0.513
33.138
26.289
23.178
21.322
19.754
16.592
15.244
14.437
15.082
13.658
13.611
12.956
12.320
11.763
11.184
10.559
10.015
9.571
9.133
8.650
8.110
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
01/14/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
京公网安备 11010802033920号
EEWORLD
