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NE8500199

Description
C-BAND MEDIUM POWER GaAs MESFET
File Size59KB,4 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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NE8500199 Overview

C-BAND MEDIUM POWER GaAs MESFET

C-BAND MEDIUM POWER GaAs MESFET NE8500100
NE8500199
FEATURES
• HIGH OUTPUT POWER:
1 W
• HIGH LINEAR GAIN:
9.0 dB
• HIGH EFFICIENCY:
37% (PAE)
• INDUSTRY STANDARD PACKAGING
• THIS DEVICE IS ALSO AVAILABLE AS A
TWO-CELL CHIP: NE8500100
ABSOLUTE MAXIMUM RATINGS
1
(T
C
= 25
°C
unless otherwise noted)
SYMBOLS
V
DS
V
GD
V
GS
I
DS
I
GS
P
T
T
CH
T
STG
PARAMETERS
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
V
A
mA
W
°C
°C
RATINGS
15
-18
-12
IDSS
6.0
6.0
175
-65 to +175
DESCRIPTION
The NE8500199 is a medium power GaAs MESFET designed
for up to a 1W output stage or as a driver for higher power
devices. The device has no internal matching and can be
used at frequencies from UHF to 8.5 GH
Z
. The device is
available in the “99” package or in chip form. The chip is a two-
cell die; bonding both cells delivers the rated performance.
The NE850 Series Transistors are manufactured to NEC's
stringent quality assurance standards to ensure highest reli-
ability and consistent superior performance.
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
RECOMMENDED OPERATING LIMITS
SYMBOLS
V
DS
T
CH
G
COMP
R
G
PARAMETERS
Drain to Source Voltage
Channel Temperature
Gain Compression
Gate Resistance
UNITS MIN
V
°C
dB
KΩ
1
9
TYP MAX
10
130
3.0
4
ELECTRICAL CHARACTERISTICS
(T
C
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
P
OUT
G
L
CHARACTERISTICS
Power Out at Fixed Input Power
Linear Gain
Collector Efficiency
Drain Source Current
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
= 25°C)
NE8500199
NE8500100
00 (Chip), 99
UNITS
dBm
dB
%
mA
mA
V
mS
°C/W
330
-3.0
300
60
MIN
28.5
TYP
29.5
9.0
37
200
825
-1.0
MAX
TEST CONDITIONS
P
IN
= 21.0 dBm
f = 7.2 GHz
V
DS
= 10 V; I
DSQ
= 200 mA
R
G
= 1KΩ
V
DS
= 2.5 V; V
GS
= 0 V
V
DS
= 2.5 V; I
DS
= 4 mA
V
DS
= 2.5 V; I
DS
= I
DSS
Channel to Case
Functional
Characteristics
η
ADD
I
DS
Electrical DC
Characteristics
I
DSS
V
P
g
m
R
TH
California Eastern Laboratories

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