PRELIMINARY DATA SHEET
NR4510US,NR4510UT
φ
50
µ
m InGaAs APD RECEIVER FOR 2.5 Gb/s
ROSA WITH INTERNAL PRE-AMPLIFIER
DESCRIPTION
The NR4510US and NR4510UT are InGaAs APD ROSAs with an internal
pre-amplifier in a receptacle type package designed for SFF/SFP transceiver
with LC duplex receptacle.
Synchronous
Digital
recommendations.
These devices are ideal as a receiver for
(SDH)
system,
STM-16,
ITU-T
Hierarchy
RECEIVER
FEATURES
• Internal pre-amplifier
• Sensitivity
• Minimum receiver sensitivity
• 50
Ω
differential output
• Small package
• Based on Telcordia reliability
S = 0.80 A/W MIN. @
λ
= 1.31
µ
m
S = 0.85 A/W MIN. @
λ
= 1.55
µ
m
P
r
=
−34
dBm
• Wide operating temperature range T
C
=
−40
to +85°C
φ
4.6 mm ROSA (Total length 12.0 mm MAX.)
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Document No. PL10510EJ01V0DS (1st edition)
Date Published October 2004 CP(K)
NR4510US,NR4510UT
PACKAGE DIMENSIONS (UNIT: mm)
BOTTOM VIEW
NR4510US
(1.76)
φ
4.75±0.1
φ
2.92
1.1±0.05
4.045±0.05
φ
0.8 MAX.
GND
6.99±0.2
0.55±0.05
4–
φ
0.6±0.15
45˚
11.5±0.5
φ
3.4
φ
4.75±0.1
OPTICAL
REFERENCE
PLANE
30˚
V
out (–)
V
out (+)
5–
φ
0.3±0.05
(2.16)
P.C.D. =
φ
2.5
(
φ
4.75)
1.0
(1.76)
GND
NR4510UT
φ
0.8 MAX.
12.5±0.5
0.3 MAX.
5–
φ
0.3
4–
φ
0.6±0.15
45˚
φ
0.8 MAX.
φ
2.5
P.C.D
φ
4.56
30˚
V
out (+)
V
out (–)
5–
φ
0.3±0.05
(2.16)
P.C.D. =
φ
2.5
PIN CONNECTIONS
Symbol
V
pd
V
CC
V
out (+)
V
out (–)
GND
Function
PD cathode
Pre-amplifer power supply (+3.3 V)
Data output (+)
Data output (–)
Case ground
2
Preliminary Data Sheet PL10510EJ01V0DS
(1.51)
V
CC
V
pd
(1.51)
V
CC
V
pd
NR4510US,NR4510UT
ORDERING INFORMATION
Part Number
NR4510US-AZ*
Package
Bottom View
φ
4.6 mm ROSA
V
CC
V
out (–)
GND
V
pd
V
out (+)
GND
V
CC
V
out (+)
V
pd
V
out (–)
NR4510UT-AZ*
*Note
Please refer to the last page of this data sheet “Compliance with
EU Directives” for Pb-Free RoHS Compliance Information.
ABSOLUTE MAXIMUM RATINGS
Parameter
Reverse Current
Pre-amplifier IC Supply Voltage
Operating Case Temperature
Storage Temperature
Lead Soldering Temperature
Symbol
I
R
V
CC
T
C
T
stg
T
sld
Ratings
1.5
4.5
−40
to +85
−40
to +85
350 (3 sec.)
Unit
mA
V
°C
°C
°C
Preliminary Data Sheet PL10510EJ01V0DS
3
NR4510US,NR4510UT
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
=
−40
to +85°C, V
CC
= 3.3 V,
λ
= 1.31
µ
m, 1.50 to 1.62
µ
m, unless otherwise specified)
Parameter
Reverse Break Down Voltage
Temperature Coefficient of Reverse
Breakdown Voltage
Dark Current
Minimum Receiver Sensitivity
I
D
P
r
V
R
= 0.9 V
BR
, T
C
= 85°C
2.48832 Gb/s, BER = 10
−
,
10
Symbol
V
BR
δ
I
D
= 100
µ
A
Conditions
MIN.
40
0.09
TYP.
60
MAX.
70
0.15
500
Unit
V
%/
°C
nA
dBm
−34
−32
PRBS = 2
−1,
ER = 10 dB, NRZ,
23
AC-coupled, Mopt
Maximum Optical Input Power
P
ovl
2.48832 Gb/s, BER = 10
−
,
10
−6
−5
dBm
PRBS = 2
−1,
ER = 10 dB, NRZ,
23
AC-coupled, M = 3
Sensitivity
S
M = 1,
λ
= 1.31
µ
m
M = 1,
λ
= 1.55
µ
m
Cut-off Frequency
Optical Return Loss
Transimpedance
Pre-amplifier IC Supply Voltage
Pre-amplifier IC Supply Current
f
C
ORL
Z
t
V
CC
I
CC
V
CC
= 3.15 to 3.45 V
AC-coupled, R
L
= 50
Ω,
M = 10,
−3
dB Ref to 100 MHz
SMF
f = 100 MHz, 50
Ω
single-ended,
AC-coupled 50
Ω
load
3.15
3.3
45
3.4 5
60
V
mA
27
1.25
1.4
dB
kΩ
0.8
0.85
1.7
1.9
GHz
A/W
4
Preliminary Data Sheet PL10510EJ01V0DS
NR4510US,NR4510UT
REFERENCE
Do cume nt Nam e
OPTICAL SEMICONDUCTOR DEVICES FOR FIBEROPTIC COMMUNICATIONS SELECTION GUIDE
Opto-Electronics Devices Pamphlet
D o c u me n t N o .
PL10161E
PX10160E
Preliminary Data Sheet PL10510EJ01V0DS
5
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