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SBL850

Description
8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size243KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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SBL850 Overview

8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC

MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
SBL820
THRU
SBL860
8 Amp
Schottky Barrier
Rectifier
20 to 60 Volts
Features
High Surge Capacity
High Efficiency
Low Forward Voltage
Low Power Loss
Case Material: Molded Plastic.
Classification Rating 94V-0
UL Flammability
Maximum Ratings
Operating Temperature: -50
°C
to +125°C
Storage Temperature: -
50°C
to +125°C
MCC
Catalog
Number
Device
Marking
Maximum
Reccurrent
Peak
Reverse
Voltage
20V
30V
40V
50V
60V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
20V
30V
40V
50V
60V
TO-220AC
B
C
K
PIN
1
2
L
M
D
A
E
SBL820
SBL830
SBL840
SBL850
SBL860
SBL820
SBL830
SBL840
SBL850
SBL860
14V
21V
28V
35V
42V
F
G
I
H
J
N
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
SBL820~840
SBL850~860
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
F(AV)
8A
T
C
= 100
°C
PIN 1
PIN 2
CASE
I
FSM
150 A
8.3ms, half sine


MM

14.22
9.65
2.54
5.84
9.65
------
12.70
4.83
0.51
0.30
3.53
3.56
1.14
2.03


15.88
10.67
3.43
6.86
10.67
6.35
14.73
5.33
1.14
0.64
4.09
4.83
1.40
2.92
 
INCHES



.560
.625
.380
.420
.100
.135
.230
.270
.380
.420
------
.250
.500
.580
.190
.210
.020
.045
.012
.025
.139
.161
.140
.190
.045
.055
.080
.115
I
FM
= 8A
V
F
.55V
.75V
T
A
= 25°C*
I
R
0.5 m A T
C
= 25°C
50m A T
C
= 125°C

A
B
C
D
E
F
G
H
I
J
K
L
M
N
*Pulse test: Pulse width 200
µsec
Revision: 5
www.mccsemi.com
1 of 3
2006/05/29

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Description 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC
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