DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D102
BAP50-05W
General purpose PIN diode
Product specification
Supersedes data of 2001 Mar 02
2001 Apr 17
Philips Semiconductors
Product specification
General purpose PIN diode
FEATURES
•
Two elements in common cathode configuration in a
small-sized plastic SMD package
•
Low diode capacitance
•
Low diode forward resistance.
APPLICATIONS
•
General RF applications.
handbook, halfpage
BAP50-05W
PINNING
PIN
1
2
3
DESCRIPTION
anode
anode
common cathode
3
3
DESCRIPTION
1
2
Two planar PIN diodes in common cathode configuration
in a SOT323 small SMD plastic package.
1
Top view
2
MAM382
Marking code:
W4-.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
°C
−
−
−
−65
−65
50
50
240
+150
+150
V
mA
mW
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2001 Apr 17
2
Philips Semiconductors
Product specification
General purpose PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
V
R
I
R
C
d
forward voltage
reverse voltage
reverse current
diode capacitance
I
F
= 50 mA
I
R
= 10
µA
V
R
= 50 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 5 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
|s
21
|
2
isolation
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 0.5 mA; f = 900 MHz
I
F
= 0.5 mA; f = 1800 MHz
I
F
= 0.5 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
τ
L
charge carrier life time
−
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
PARAMETER
CONDITIONS
MIN.
BAP50-05W
TYP.
MAX.
UNIT
0.95
−
−
0.45
0.35
0.3
25
14
3
19
15.7
13.5
1.84
1.90
1.92
1.08
1.13
1.17
0.26
0.30
0.36
1.05
1.1
−
100
−
0.6
0.5
40
25
5
−
−
−
−
−
−
−
−
−
−
−
−
−
V
V
nA
pF
pF
pF
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
µs
when switched from I
F
= 10 mA to
−
I
R
= 6 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
−
L
S
Note
series inductance
1.6
−
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
250
UNIT
K/W
2001 Apr 17
3
Philips Semiconductors
Product specification
General purpose PIN diode
GRAPHICAL DATA
BAP50-05W
handbook, halfpage
10
3
MLD605
handbook, halfpage
600
Cd
MLD606
rD
(Ω)
10
2
(fF)
400
10
200
1
10
−1
10
−1
1
10
IF (mA)
10
2
0
0
4
8
12
16
VR (V)
20
f = 100 MHz; T
j
= 25
°C.
f = 1 MHz; T
j
= 25
°C.
Fig.2
Forward resistance as a function of
forward current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
s
2
0
MLD607
(1)
21
(dB)
−1
handbook, halfpage
s
2
0
MLD608
(2)
21
(dB)
−5
(3)
−2
−10
−3
−15
−4
−20
−5
0.5
1
1.5
2
2.5
f (GHz)
3
−25
0.5
1
1.5
2
2.5
f (GHz)
3
(1) I
F
= 10 mA.
(2) I
F
= 1 mA.
(3) I
F
= 0.5 mA.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°C.
Diode inserted in series with a 50
Ω
stripline circuit and
biased via the analyzer Tee network.
T
amb
= 25
°C.
Fig.4
Insertion loss
|s
21
|
2
of the diode in on-state
as a function of frequency; typical values.
Fig.5
Isolation (|s
21
|
2
) of the diode in off-state as a
function of frequency; typical values.
2001 Apr 17
4
Philips Semiconductors
Product specification
General purpose PIN diode
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BAP50-05W
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
2001 Apr 17
5
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