DC COMPONENTS CO., LTD.
R
DXTA13
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for applications requiring extremely high
current gain.
SOT-89
Pinning
1 = Base
2 = Collector
3 = Emitter
.066(1.70)
.059(1.50)
.063(1.60)
.055(1.40)
Absolute Maximum Ratings
(T
A
=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CES
V
EBO
I
C
P
D
T
J
T
STG
o
C)
Rating
30
30
10
300
1
+150
-55 to +150
Unit
V
V
V
mA
W
o
o
.167(4.25)
.159(4.05)
1
2
3
.102(2.60)
.095(2.40)
Symbol
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CES
BV
EBO
I
CBO
I
EBO
(1)
Min
30
30
10
-
-
-
-
5K
10K
125
Typ
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
100
100
1.5
2
-
-
-
Unit
V
V
V
nA
nA
V
V
-
-
MHz
Test Conditions
I
C
=100µA, I
E
=0
I
C
=100µA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=10V, I
C
=0
I
C
=100mA, I
B
=0.1mA
I
C
=100mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
I
C
=100mA, V
CE
=5V
V
CE
=5V, f=100MHz, I
C
=10mA
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
Transition Frequency
(1)Pulse Test: Pulse Width
(1)
V
CE(sat)
V
BE(on)
h
FE1
h
FE2
f
T
380µs, Duty Cycle
2%
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