DC COMPONENTS CO., LTD.
R
DXTA44
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for applications requiring high breakdown
voltage.
SOT-89
.066(1.70)
.059(1.50)
.063(1.60)
.055(1.40)
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
400
400
6
300
1
+150
-55 to +150
Unit
V
V
V
mA
W
o
o
.167(4.25)
.159(4.05)
1
2
3
.102(2.60)
.095(2.40)
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
h
FE1
h
FE2
h
FE3
h
FE4
C
ob
380µs, Duty Cycle
2%
Min
400
400
6
-
-
-
-
-
-
40
50
45
40
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
4
Max
-
-
-
100
500
100
0.375
0.75
0.75
-
300
-
-
6
Unit
V
V
V
nA
nA
nA
V
V
V
-
-
-
-
pF
I
C
=1mA
Test Conditions
I
C
=100µA
I
E
=10µA
V
CB
=400V
V
CE
=400V
V
EB
=4V
I
C
=20mA, I
B
=2mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=50mA, V
CE
=10V
I
C
=100mA, V
CE
=10V
V
CB
=20V, f=1MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
(1)
DC Current Gain
(1)
Output Capacitance
(1)Pulse Test: Pulse Width
Embedded System
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