DC COMPONENTS CO., LTD.
R
DXTD882
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for the output stage of 0.75W audio,
voltage regulator, and relay driver.
SOT-89
.066(1.70)
.059(1.50)
.063(1.60)
.055(1.40)
Pinning
1 = Base
2 = Collector
3 = Emitter
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
1
2
3
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
40
30
5
3
1.5
+150
-55 to +150
Unit
V
V
V
A
W
o
C
o
C
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
40
30
5
-
-
-
-
30
100
-
-
Typ
-
-
-
-
-
-
-
-
-
90
45
Max
-
-
-
1
1
0.5
2
-
500
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
B
=0
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
I
C
=20mA, V
CE
=2V
I
C
=1A, V
CE
=2V
I
C
=0.1A, V
CE
=5V, f=100MHz
V
CB
=10V, f=1MHz, I
E
=0
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
(1)
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
f
T
C
ob
380µs, Duty Cycle
2%
Classification of h
FE2
Rank
Range
Q
100~200
P
160~320
E
250~500
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