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IRFU3412PBF

Description
SMPS MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size225KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRFU3412PBF Overview

SMPS MOSFET

IRFU3412PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-251AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)160 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)48 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.025 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)140 W
Maximum pulsed drain current (IDM)190 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 95498A
SMPS MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
Motor Drive
l
Bridge Converters
l
All Zero Voltage Switching
l
Lead-Free
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Enhanced Body Diode dv/dt Capability
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 second
Mounting torqe, 6-32 or M3 screw
IRFR3412PbF
IRFU3412PbF
HEXFET
®
Power MOSFET
V
DSS
100V
R
DS(on)
max
0.025Ω
I
D
48A†
D-Pak
IRFR3412
I-Pak
IRFU3412
Max.
48
†
34
†
190
140
0.95
± 20
6.4
-55 to + 175
300(1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)

Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
48
†
190
A
––– ––– 1.3
V
„
––– 68 100
ns
––– 160 240
nC
––– 4.5 6.8
A
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 29A, V
GS
= 0V
T
J
= 125°C, I
F
= 29A
di/dt = 100A/µs
„
D
S
www.irf.com
1
12/03/04

IRFU3412PBF Related Products

IRFU3412PBF IRFR3412PBF
Description SMPS MOSFET SMPS MOSFET
Is it Rohs certified? conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-251AA TO-252AA
package instruction IN-LINE, R-PSIP-T3 LEAD FREE, PLASTIC, DPAK-3
Contacts 3 3
Reach Compliance Code not_compliant _compli
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 160 mJ 160 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V
Maximum drain current (Abs) (ID) 48 A 48 A
Maximum drain current (ID) 30 A 30 A
Maximum drain-source on-resistance 0.025 Ω 0.025 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-251AA TO-252AA
JESD-30 code R-PSIP-T3 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 140 W 140 W
Maximum pulsed drain current (IDM) 190 A 190 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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