Philips Semiconductors
Product specification
Low-voltage variable capacitance double diode
FEATURES
•
Excellent linearity
•
C1: 95 pF; C7.5: 27.6 pF
•
C1 to C7.5 ratio: min. 3.1
•
Very low series resistance
•
Small plastic SMD package.
APPLICATIONS
•
Electronic tuning in FM-radio
•
Voltage Controlled Oscillators (VCO).
DESCRIPTION
The BB201 is a variable capacitance double diode with a
common cathode, fabricated in silicon planar technology
and encapsulated in the SOT23 small plastic SMD
package.
MARKING
TYPE NUMBER
BB201
MARKING CODE
SCp
handbook, halfpage
BB201
PINNING
PIN
1
2
3
anode (a
1
)
anode (a
2
)
common cathode
DESCRIPTION
3
3
1
2
1
2
MAM169
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature range
operating junction temperature
−
−
−55
−55
15
20
+125
+125
V
mA
°C
°C
PARAMETER
MIN.
MAX.
UNIT
2001 Oct 12
2
Philips Semiconductors
Product specification
Low-voltage variable capacitance double diode
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
I
R
r
S
C
d
reverse current
diode series resistance
diode capacitance
V
R
= 15 V
V
R
= 15 V; T
j
= 85
°C
f = 100 MHz; V
R
= 3 V
V
R
= 1 V; f = 1 MHz
V
R
= 3 V; f = 1 MHz
V
R
= 7.5 V; f = 1 MHz
V
R
= 8 V; f = 1 MHz
C
d
(
1V
)
-------------------
-
C
d
(
7.5V
)
capacitance ratio
f = 1 MHz
−
−
−
89
−
25.5
−
3.1
−
−
0.25
95
60
27.6
25.5
−
10
200
0.5
102
−
29.7
−
3.8
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
BB201
UNIT
nA
nA
Ω
pF
pF
pF
pF
GRAPHICAL DATA
handbook, full pagewidth
140
Cd
(pF)
120
MGU477
100
80
60
40
20
0
10
−1
1
10
VR (V)
10
2
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
2001 Oct 12
3
Philips Semiconductors
Product specification
Low-voltage variable capacitance double diode
BB201
10
3
handbook, halfpage
IR
(nA)
MGU478
10
−3
handbook, halfpage
TCd
MGU479
(K
−1
)
10
2
10
−4
10
1
0
20
40
60
80
Tj (°C)
100
10
−5
10
−1
1
10
VR (V)
10
2
Fig.4
Fig.3
Reverse current as a function of junction
temperature; maximum values.
Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.
2001 Oct 12
4
Philips Semiconductors
Product specification
Low-voltage variable capacitance double diode
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BB201
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2001 Oct 12
5
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