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SFF40N30Z

Description
40 AMP / 300 Volts 0.10 OHM N-Channel Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size43KB,3 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SFF40N30Z Overview

40 AMP / 300 Volts 0.10 OHM N-Channel Power MOSFET

SFF40N30Z Parametric

Parameter NameAttribute value
MakerSSDI
Parts packaging codeTO-254AA
package instructionFLANGE MOUNT, S-XSFM-P3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1500 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage300 V
Maximum drain current (Abs) (ID)40 A
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.06 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-XSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF40N30M
SFF40N30Z
DESIGNER’S DATA SHEET
Part Number / Ordering Information
SFF40N30 __ __ __
1/
¦ ¦ +
Screening
2/
__
= Not Screen
¦ ¦
TX = TX Level
¦ ¦
TXV = TXV Level
¦ ¦
S = S Level
¦ ¦
¦ +
Lead Option
3/
__
= Straight Leads
¦
DB = Down Bend
¦
UB = Up Bend
¦
+
Package
3/
M = TO-254
40 AMP / 300 Volts
0.10
N-Channel Power MOSFET
Features:
Rugged Construction with Polysilicon Gate Cell
Low R
DS(ON)
and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Ceramic Seals for Improved Hermeticity
Hermetically Sealed Package
TX, TXV, Space Level Screening Available
Replacement for IXTH40N30 Types
Z = TO-254Z
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
TO-254 (M)
TO-254Z (Z)
Symbol
V
DS
V
GS
I
D
T
C
= 25ºC
T
C
= 55ºC
P
D
Top & Tstg
R
θJC
Value
300
±20
40
150
114
-55 to +150
0.83
Units
Volts
Volts
Amps
W
ºC
ºC/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00141E
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