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SFF24N50-3

Description
24 AMP / 500 Volts 0.2 ohm N-Channel Power MOSFET
File Size29KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
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SFF24N50-3 Overview

24 AMP / 500 Volts 0.2 ohm N-Channel Power MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF24N50/3
SFF24N50/3T
24 AMP / 500 Volts
0.2
N-Channel
Power MOSFET
TO-3
DESIGNER’S DATA SHEET
Features:
Rugged Construction with Polysilicon Gate Cell
Low R
DS(ON)
and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed Surface Mount Power Package
TX, TXV, Space Level Screening Available
Replacement for IXTH24N50 Types
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current (Tj limited)
Avalanche Current
Avalanche Energy
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation @ TC=25ºC
Total Device Dissipation @ TC=55ºC
Package Outline: TO-3
Pin Out:
Pin 1: GATE
Pin 2: SOURCE
Pin 3: DRAIN
Notes:
1.
P/N: SFF 24N50/3:
Pin Diameter : 0.043”
0.038”
2.
P/N: SFF24N50/3T:
Pin Diameter: 0.063”
0.058”
Ø.875
MAX
2x Ø.165
.151
SEATING PLANE
Symbol
V
DS
V
GS
I
D
Repetitive
Repetitive
Single Pulse
I
AR
E
AR
E
AS
Top & Tstg
R
θJC
PD
Value
500
±20
24
21
1
690
-55 to +150
0.75
(typ 0.6)
167
126
.675
.655
Units
Volts
Volts
Amps
Amps
mJ
ºC
ºC/W
WATTS
.135 MAX
.525 MAX
2x R.188 MAX
2x .043
.038
.440
.420
2
2x .225
.205
1
.450
.250
2x .312 MIN
1.197
1.177
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00175E
DOC

SFF24N50-3 Related Products

SFF24N50-3 SFF24N50/3 SFF24N50/3T
Description 24 AMP / 500 Volts 0.2 ohm N-Channel Power MOSFET 24 AMP / 500 Volts 0.2 ohm N-Channel Power MOSFET 24 AMP / 500 Volts 0.2 ohm N-Channel Power MOSFET
Maker - SSDI SSDI
package instruction - FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code - compli compli
Shell connection - DRAIN DRAIN
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 500 V 500 V
Maximum drain current (ID) - 24 A 24 A
Maximum drain-source on-resistance - 0.25 Ω 0.25 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-3 TO-3
JESD-30 code - O-MBFM-P2 O-MBFM-P2
Number of components - 1 1
Number of terminals - 2 2
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - METAL METAL
Package shape - ROUND ROUND
Package form - FLANGE MOUNT FLANGE MOUNT
Polarity/channel type - N-CHANNEL N-CHANNEL
Certification status - Not Qualified Not Qualified
surface mount - NO NO
Terminal form - PIN/PEG PIN/PEG
Terminal location - BOTTOM BOTTOM
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
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