SFF24N50/3T datasheet, PDF - EEWORLD Datasheet

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SFF24N50/3T: Description24 AMP / 500 Volts 0.2 ohm N-Channel Power MOSFET; CategoryDiscrete semiconductor The transistor; File Size29KB，2 Pages; ManufacturerSSDI; Websitehttp://www.ssdi-power.com/

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SFF24N50/3T Overview

24 AMP / 500 Volts 0.2 ohm N-Channel Power MOSFET

SFF24N50/3T Parametric

Parameter Name	Attribute value
Maker	SSDI
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compli
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	24 A
Maximum drain-source on-resistance	0.25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF24N50/3

SFF24N50/3T

24 AMP / 500 Volts

0.2

Ω

N-Channel

Power MOSFET

TO-3

DESIGNER’S DATA SHEET

Features:

•

Rugged Construction with Polysilicon Gate Cell

Low R

DS(ON)

and High Transconductance

Excellent High Temperature Stability

Very Fast Switching Speed

Fast Recovery and Superior dV/dt Performance

Increased Reverse Energy Capability

Low Input and Transfer Capacitance for Easy Paralleling

Hermetically Sealed Surface Mount Power Package

TX, TXV, Space Level Screening Available

Replacement for IXTH24N50 Types

Maximum Ratings

Drain – Source Voltage

Gate – Source Voltage

Continuous Drain Current (Tj limited)

Avalanche Current

Avalanche Energy

Operating & Storage Temperature

Thermal Resistance, Junction to Case

Total Device Dissipation @ TC=25ºC

Total Device Dissipation @ TC=55ºC

Package Outline: TO-3

Pin Out:

Pin 1: GATE

Pin 2: SOURCE

Pin 3: DRAIN

Notes:

P/N: SFF 24N50/3:

Pin Diameter : 0.043”

0.038”

P/N: SFF24N50/3T:

Pin Diameter: 0.063”

0.058”

Ø.875

MAX

2x Ø.165

.151

SEATING PLANE

Symbol

Repetitive

Single Pulse

Top & Tstg

θJC

Value

500

±20

690

-55 to +150

0.75

(typ 0.6)

167

126

.675

.655

Units

Volts

Amps

ºC

ºC/W

WATTS

.135 MAX

.525 MAX

2x R.188 MAX

2x .043

.038

.440

.420

2x .225

.205

.450

.250

2x .312 MIN

1.197

1.177

NOTE:

All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00175E

DOC

SFF24N50/3T Related Products

	SFF24N50/3T	SFF24N50/3	SFF24N50-3
Description	24 AMP / 500 Volts 0.2 ohm N-Channel Power MOSFET	24 AMP / 500 Volts 0.2 ohm N-Channel Power MOSFET	24 AMP / 500 Volts 0.2 ohm N-Channel Power MOSFET
Maker	SSDI	SSDI	-
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	-
Reach Compliance Code	compli	compli	-
Shell connection	DRAIN	DRAIN	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	500 V	500 V	-
Maximum drain current (ID)	24 A	24 A	-
Maximum drain-source on-resistance	0.25 Ω	0.25 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	TO-3	TO-3	-
JESD-30 code	O-MBFM-P2	O-MBFM-P2	-
Number of components	1	1	-
Number of terminals	2	2	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Package body material	METAL	METAL	-
Package shape	ROUND	ROUND	-
Package form	FLANGE MOUNT	FLANGE MOUNT	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Certification status	Not Qualified	Not Qualified	-
surface mount	NO	NO	-
Terminal form	PIN/PEG	PIN/PEG	-
Terminal location	BOTTOM	BOTTOM	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-

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