SFF25P20S2I datasheet, PDF - EEWORLD Datasheet

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SFF25P20S2I: Description25 AMP / 200 Volts 125 mヘ P-Channel MOSFET; CategoryDiscrete semiconductor The transistor; File Size119KB，2 Pages; ManufacturerSSDI; Websitehttp://www.ssdi-power.com/

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SFF25P20S2I Overview

25 AMP / 200 Volts 125 mヘ P-Channel MOSFET

SFF25P20S2I Parametric

Parameter Name	Attribute value
Maker	SSDI
package instruction	SMALL OUTLINE, R-XDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	25 A
Maximum drain-source on-resistance	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF25P20S2I

series

25 AMP / 200 Volts

125 mΩ

P-Channel MOSFET

Features:

•

polySi gate cell structure

Low ON-resistance

UIS (unclamped inductive switching) rated

Hermetically Sealed, Isolated Package

Low package inductance

Stress relief provided by flexible leads –

several options available

Improved (R

DS(ON)

Q

G

) figure of merit

TX TXV S Level screening available

DESIGNER’S DATA SHEET

SMD 2 isolated

NOTE: SEE DASH# DEFINITION TABLE FOR AVAILABLE

LEAD FORMING CONFIGURATION

•

Maximum Ratings

Drain - Source Voltage

Gate – Source Voltage

Max. Continuous Drain Current

Max. Instantaneous Drain Current (Tj limited)

Max. Avalanche current

Repetitive Avalanche Energy

Total Power Dissipation

Operating & Storage Temperature

Maximum Thermal Resistance

Junction to Case

@ T

C

= 25ºC

@ T

C

= 25ºC

@ T

C

= 25ºC

Symbol

V

DSS

V

GS

I

D1

I

D3

I

AR

E

AR

P

D

T

OP

& T

STG

R

0JC

Symbol

BV

DSS

R

DS(on)

V

GS(th)

I

GSS

I

DSS

Value

-200

±20

25

95

25

30

250

-55 to +150

0.5

Units

V

A

mJ

W

ºC

ºC/W

Electrical Characteristics (

@25

o

C, unless otherwise specified)

Drain to Source Breakdown Voltage

Drain to Source On State Resistance

Gate Threshold Voltage

Gate to Source Leakage

Zero Gate Voltage Drain Current

V

GS

= 0V, I

D

= 250µA

V

GS

= 10V, I

D

= 12A, Tj= 25

o

C

V

GS

= 10V, I

D

= 25A, Tj= 25

o

C

V

DS

= V

GS

, I

D

= 250µA

V

GS

= ±20V

V

DS

= 160V, V

GS

= 0V, T

j

= 25

o

C

V

DS

= 160V, V

GS

= 0V, T

j

= 125

o

C

Min

200

––

3.0

––

Typ Max

––

110

125

––

120

––

5.0

±100

25

1

Units

V

mΩ

V

nA

µA

mA

NOTE:

All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0009A

DOC

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