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RF6001_06

Description
FRACTIONAL-N RF SYNTHESIZER WITH MODULATOR AND DIGITAL IF FILTER Part of the POLARISTM TOTAL RADIOTM Solution
File Size41KB,2 Pages
ManufacturerRF Micro Devices (Qorvo)
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RF6001_06 Overview

FRACTIONAL-N RF SYNTHESIZER WITH MODULATOR AND DIGITAL IF FILTER Part of the POLARISTM TOTAL RADIOTM Solution

RF6001
0
RoHS Compliant & Pb-Free Product
Typical Applications
• GSM/DCS Handsets
• GSM/DCS/PCS Handsets
• Quad-Band GSM Handsets
Product Description
-A-
7.00 TYP
6.75 TYP
3.50 TYP
3.37 TYP
0.10 C B
2 PLCS
Part of the POLARIS
TM
TOTAL RADIO
TM
Solution
FRACTIONAL-N RF SYNTHESIZER WITH
MODULATOR AND DIGITAL IF FILTER
• Multi-Band EDGE
RX
Handsets
• Multi-Band GPRS Handsets
0.10 C A
2 PLCS
5
0.08 C
The RF6001 is a combination synthesizer and signal pro-
cessing IC, which along with the RF2722 Very-Low-IF
Receive IC, constitutes RFMD's low-cost GSM trans-
ceiver solution. The high-performance fractional-N syn-
thesizer offers numerous features including a fully digital
GMSK modulator with provisions for an analog I/Q inter-
face and extremely low current consumption. The signal
processor section provides a digital receive filter path
designed to complement the RF2722. The IF inputs are
digitized, filtered and downconverted to baseband I and Q
signals. The flexible baseband interface can be config-
ured for either analog or digital operation. Chip functional-
ity is controlled through a three-wire serial data interface
(SDI) bus. The RF2722 is part of the POLARIS
TM
TOTAL
RADIO
TM
0.90
0.85
0.05
0.00
0.70
0.65
2 PLCS
0.10 C B
2 PLCS
0.10 C A
-B-
0.30
0.18
3
-C-
PLANE
0.10 M C A B
SEATING
0.60
TYP
0.24
0.60
TYP
0.24
NOTES:
1. Shaded lead is Pin 1.
2. Die thickness allowable is 0.305 mm max.
(0.012 inches max.).
3
Dimension applies to plated terminal and is
measured between 0.20 mm and 0.25 mm
from terminal tip.
4.
Package warpage maximum 0.08 mm.
Applied for exposed pad and terminals.
5
Exlude embedding part of exposed pad
from measuring.
solution.
0.50
0.30
TYP
0.50
5.25
SQ
4.95
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
OSCO
DCD
VDD
TXI
Package Style: QFN, 48-Pin, 7x7
GaAs HBT
SiGe HBT
GaN HEMT
MCK/
TXQB
MS/
TXIB
MDI/
TXQ
SSB
SDI
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Features
• Fractional-N Synthesizer with Digital
RXEN
LDTO
SCLK
48
IIN 1
47
46
45
44
43
42
41
40
39
38
37
36
ENR/
IOUT
CLKR/
IBOUT
FSR/
QOUT
DRI/
QBOUT
DRQ/
GPO3
GMSK Modulator
• Signal Processing Circuitry for use with
RF2722 VLIF Receiver
• Versatile Baseband Interface
• Integrated RF Transmit VCO’s
35
Digital
VREG
DAC
LPF
IBIN 2
Digital Processing
ADC
Decimation
Downconversion
Channel Filters
ADC
DAC
LPF
Output
Mux
Standard Serial
Interface
QBIN 3
34
QIN 4
33
TXST 5
32
10
GPO1 6
TX
Interface
GMSK
Modulator
31 OSCM
GPO2 7
30 OSCOM
DCAD 8
ADC
VREG
Serial
Programming
Interface
29 DCV2
Fractional
Divider
3
VDDRX 9
Control and
Calibration
PA Ramp
Control
VCO2
Loop Filters
28 GND
Ordering Information
RF6001
Fractional-N RF Synthesizer with Modulator and Dig-
ital IF Filter
OSCB 10
Ref.
Osc.
Charge Pump
Phase Detector
27 DCV1
OSCA 11
DAC 1 and DAC 2
VCO1
26 VCO1P
NC 12
13
BGDC
14
DAC1
15
DAC2
16
TXEN
17
VTC
18
VCC
19
VT
20
FIN
21
NC
22
VCO2
23
VCO1
VCO
VREG
25 VCO1N
24
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A3 050929
VCCV
12-19

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