B40C800_06 datasheet, PDF - EEWORLD Datasheet

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B40C800_06: Description1 A, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size39KB，4 Pages; ManufacturerWon-Top Electronics Co., Ltd.; Websitehttps://www.wontop.com/

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B40C800_06 Overview

1 A, SILICON, BRIDGE RECTIFIER DIODE

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WTE

POWER SEMICONDUCTORS

B40C800 – B500C800

0.8A SINGLE-PHASE BRIDGE RECTIFIER

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

+ ~ ~ -

Excellent Case Dielectric Strength

Mechanical Data

Case: WOB, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 1.1 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

WOB

Dim

Min

Max

8.60

9.10

5.0

5.50

27.9

—

25.4

—

0.71

0.81

4.60

5.60

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

=25°C unless otherwise specified

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Input Voltage Recommended

Average Rectified Output Current (Note 1) @T

= 50°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

Forward Voltage (per element)

Peak Reverse Current

At Rated DC Blocking Voltage

Operating Temperature Range

Storage Temperature Range

= 0.8A

= 25°C

= 100°C

Symbol

RRM

RWM

R(RMS)

B40C

800

100

B80C

800

200

B125C

800

300

125

B250C

800

600

250

B380C

800

900

380

B500C

800

1200

500

Unit

0.8

FSM

STG

1.0

5.0

500

-55 to +125

-55 to +150

µA

°C

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

B40C800 – B500C800

1 of 4

B40C800_06 Related Products

	B40C800_06	B40C800	B80C800	B500C800	B380C800	B250C800
Description	1 A, SILICON, BRIDGE RECTIFIER DIODE	0.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	0.8 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE	0.8 A, 900 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free?	-	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	-	O-PBCY-W3	PLASTIC, WOB, 4 PIN	PLASTIC, WOB, 4 PIN	O-PBCY-W3	PLASTIC, WOB, 4 PIN
Contacts	-	4	4	4	4	4
Reach Compliance Code	-	compli	compli	unknow	compli	compli
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	-	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Minimum breakdown voltage	-	100 V	200 V	1200 V	900 V	600 V
Shell connection	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	-	1 V	1 V	1 V	1 V	1 V
JESD-30 code	-	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
JESD-609 code	-	e0	e0	e0	e0	e0
Maximum non-repetitive peak forward current	-	45 A	45 A	45 A	45 A	45 A
Number of components	-	4	4	4	4	4
Phase	-	1	1	1	1	1
Number of terminals	-	3	3	3	3	3
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	-	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	-	100 V	200 V	1200 V	900 V	600 V
surface mount	-	NO	NO	NO	NO	NO
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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