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B80C800

Description
0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size39KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric Compare View All

B80C800 Overview

0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

B80C800 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerWon-Top Electronics Co., Ltd.
package instructionPLASTIC, WOB, 4 PIN
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage200 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Maximum non-repetitive peak forward current45 A
Number of components4
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.8 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
WTE
POWER SEMICONDUCTORS
B40C800 – B500C800
Pb
0.8A SINGLE-PHASE BRIDGE RECTIFIER
Features
!
Diffused Junction
!
Low Forward Voltage Drop
A
!
High Current Capability
!
High Reliability
!
High Surge Current Capability
B
!
Ideal for Printed Circuit Boards
+ ~ ~ -
!
Excellent Case Dielectric Strength

C
D
E
~
-
+
G
G
~
Mechanical Data
!
!
!
!
!
!
!
Case: WOB, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 1.1 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
WOB
Dim
Min
Max
8.60
9.10
A
5.0
5.50
B
27.9
C
25.4
D
0.71
0.81
E
4.60
5.60
G
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Input Voltage Recommended
Average Rectified Output Current (Note 1) @T
A
= 50°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage (per element)
Peak Reverse Current
At Rated DC Blocking Voltage
Operating Temperature Range
Storage Temperature Range
@I
F
= 0.8A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
B40C
800
100
40
B80C
800
200
80
B125C
800
300
125
B250C
800
600
250
B380C
800
900
380
B500C
800
1200
500
Unit
V
V
A
0.8
I
FSM
V
FM
I
RM
T
j
T
STG
45
1.0
5.0
500
-55 to +125
-55 to +150
A
V
µA
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
B40C800 – B500C800
1 of 4
© 2006 Won-Top Electronics

B80C800 Related Products

B80C800 B40C800 B40C800_06 B500C800 B380C800 B250C800
Description 0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 900 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free? Contains lead Contains lead - Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible - incompatible incompatible incompatible
package instruction PLASTIC, WOB, 4 PIN O-PBCY-W3 - PLASTIC, WOB, 4 PIN O-PBCY-W3 PLASTIC, WOB, 4 PIN
Contacts 4 4 - 4 4 4
Reach Compliance Code compli compli - unknow compli compli
ECCN code EAR99 EAR99 - EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Minimum breakdown voltage 200 V 100 V - 1200 V 900 V 600 V
Shell connection ISOLATED ISOLATED - ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON - SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V - 1 V 1 V 1 V
JESD-30 code O-PBCY-W3 O-PBCY-W3 - O-PBCY-W3 O-PBCY-W3 O-PBCY-W3
JESD-609 code e0 e0 - e0 e0 e0
Maximum non-repetitive peak forward current 45 A 45 A - 45 A 45 A 45 A
Number of components 4 4 - 4 4 4
Phase 1 1 - 1 1 1
Number of terminals 3 3 - 3 3 3
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C - -55 °C -55 °C -55 °C
Maximum output current 0.8 A 0.8 A - 0.8 A 0.8 A 0.8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND - ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 200 V 100 V - 1200 V 900 V 600 V
surface mount NO NO - NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE - WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM - BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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