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BAW56

Description
0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236
CategoryDiscrete semiconductor    diode   
File Size43KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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BAW56 Overview

0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236

BAW56 Parametric

Parameter NameAttribute value
MakerWon-Top Electronics Co., Ltd.
Reach Compliance Codecompli
WTE
POWER SEMICONDUCTORS
BAW56
Pb
SURFACE MOUNT FAST SWITCHING DIODE
Features
!
!
!
!
!
High Conductance
Fast Switching
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose and Switching
Plastic Material – UL Recognition Flammability
Classification 94V-O
A
L
B
C
M
E
H
D
Dim
A
B
C
D
E
G
H
J
K
L
M
SOT-23
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178

Mechanical Data
!
!
!
!
!
!
!
Case: SOT-23, Molded Plastic
K
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.008 grams (approx.)
Mounting Position: Any
Marking: JC
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
J
G
TOP VIEW
All Dimensions in mm
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Peak Forward Surge Current (Note 1)
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t < 1.0µs
Symbol
V
RM
V
RRM
V
RWM
V
R
I
F
I
O
I
FSM
P
d
R
JA
T
j
, T
STG
Value
100
75
300
150
2.0
350
357
-65 to +150
Unit
V
V
mA
mA
A
mW
K/W
°C
Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Symbol
V
F
I
R
C
j
t
rr
Min
Max
0.855
1.0
2.5
2.0
6.0
Unit
V
µA
pF
nS
Test Condition
@ I
F
= 10mA
@ I
F
= 50mA
@ V
R
= 75V
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 10mA,
I
RR
= 0.1 x I
R
, R
L
= 100
Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.
BAW56
1 of 4
© 2006 Won-Top Electronics

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