71V67602S150BGI datasheet, PDF

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71V67602S150BGI: DescriptionCache SRAM, 256KX36, 3.8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119; Categorystorage storage; File Size515KB，23 Pages; ManufacturerIDT (Integrated Device Technology)

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71V67602S150BGI Overview

Cache SRAM, 256KX36, 3.8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119

71V67602S150BGI Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	BGA
package instruction	14 X 22 MM, PLASTIC, MS-028AA, BGA-119
Contacts	119
Reach Compliance Code	not_compliant
ECCN code	3A991.B.2.A
Maximum access time	3.8 ns
Other features	PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)	150 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B119
JESD-609 code	e0
length	22 mm
memory density	9437184 bit
Memory IC Type	CACHE SRAM
memory width	36
Humidity sensitivity level	3
Number of functions	1
Number of terminals	119
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA119,7X17,50
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5,3.3 V
Certification status	Not Qualified
Maximum seat height	2.36 mm
Maximum standby current	0.05 A
Minimum standby current	3.14 V
Maximum slew rate	0.325 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn63Pb37)
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	14 mm
Base Number Matches	1

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256K X 36, 512K X 18

3.3V Synchronous SRAMs

2.5V I/O, Burst Counter

Pipelined Outputs, Single Cycle Deselect

IDT71V67602

IDT71V67802

Features

256K x 36, 512K x 18 memory configurations

Supports high system speed:

– 166MHz 3.5ns clock access time

– 150MHz 3.8ns clock access time

– 133MHz 4.2ns clock access time

LBO

input selects interleaved or linear burst mode

Self-timed write cycle with global write control (GW byte

GW),

BWE

write enable (BWE and byte writes (BW

BWE),

BWx)

3.3V core power supply

Power down controlled by ZZ input

2.5V I/O supply (V

DDQ

)

Packaged in a JEDEC Standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch

ball grid array.

Description

The IDT71V67602/7802 are high-speed SRAMs organized as

256K x 36/512K x 18. The IDT71V676/78 SRAMs contain write, data,

address and control registers. Internal logic allows the SRAM to generate

a self-timed write based upon a decision which can be left until the end of

the write cycle.

The burst mode feature offers the highest level of performance to the

system designer, as the IDT71V67602/7802 can provide four cycles of

data for a single address presented to the SRAM. An internal burst address

counter accepts the first cycle address from the processor, initiating the

access sequence. The first cycle of output data will be pipelined for one

cycle before it is available on the next rising clock edge. If burst mode

operation is selected (ADV=LOW), the subsequent three cycles of output

data will be available to the user on the next three rising clock edges. The

order of these three addresses are defined by the internal burst counter

and the

LBO

input pin.

The IDT71V67602/7802 SRAMs utilize IDT’s latest high-performance

CMOS process and are packaged in a JEDEC standard 14mm x 20mm

100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array

(BGA) and 165 fine pitch ball grid array (fBGA).

Pin Description Summary

-A

Address Inputs

Chip Enable

Chip Selects

Output Enable

Global Write Enable

Byte Write Enable

Individual Byte Write Selects

Clock

Burst Address Advance

Address Status (Cache Controller)

Address Status (Processor)

Linear / Interleaved Burst Order

Sleep Mode

Data Input / Output

Core Power, I/O Power

Ground

Input

I/O

Supply

Synchronous

Asynchronous

Synchronous

N/A

Synchronous

Asynchronous

Synchronous

N/A

5311 tbl 01

BWE

(1)

CLK

ADV

ADSC

ADSP

LBO

I/O

-I/O

, I/O

-I/O

, V

DDQ

NOTE:

and

are not applicable for the IDT71V67802.

FEBRUARY 2009

2003

DECEMBER

DSC-5311/07

71V67602S150BGI Related Products

	71V67602S150BGI	71V67602S150BQI	71V67602S150BQI8	71V67602S133BGI	71V67602S166PF	71V67602S133BQGI8	71V67602S133BQG8
Description	Cache SRAM, 256KX36, 3.8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119	Cache SRAM, 256KX36, 3.8ns, CMOS, PBGA165, 13 X 15 MM, FPBGA-165	SRAM	Cache SRAM, 256KX36, 4.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119	Cache SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100	SRAM	SRAM
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
package instruction	14 X 22 MM, PLASTIC, MS-028AA, BGA-119	13 X 15 MM, FPBGA-165	,	14 X 22 MM, PLASTIC, MS-028AA, BGA-119	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100	,	,
Reach Compliance Code	not_compliant	not_compliant	unknown	not_compliant	not_compliant	unknown	unknown
Base Number Matches	1	1	1	1	1	1	1
Is it Rohs certified?	incompatible	incompatible	-	incompatible	incompatible	-	-
Parts packaging code	BGA	BGA	-	BGA	QFP	-	-
Contacts	119	165	-	119	100	-	-
ECCN code	3A991.B.2.A	3A991.B.2.A	-	3A991.B.2.A	3A991	-	-
Maximum access time	3.8 ns	3.8 ns	-	4.2 ns	3.5 ns	-	-
Other features	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	-	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	-	-
Maximum clock frequency (fCLK)	150 MHz	150 MHz	-	133 MHz	166 MHz	-	-
I/O type	COMMON	COMMON	-	COMMON	COMMON	-	-
JESD-30 code	R-PBGA-B119	R-PBGA-B165	-	R-PBGA-B119	R-PQFP-G100	-	-
JESD-609 code	e0	e0	-	e0	e0	-	-
length	22 mm	15 mm	-	22 mm	20 mm	-	-
memory density	9437184 bit	9437184 bit	-	9437184 bit	9437184 bit	-	-
Memory IC Type	CACHE SRAM	CACHE SRAM	-	CACHE SRAM	CACHE SRAM	-	-
memory width	36	36	-	36	36	-	-
Humidity sensitivity level	3	3	-	3	3	-	-
Number of functions	1	1	-	1	1	-	-
Number of terminals	119	165	-	119	100	-	-
word count	262144 words	262144 words	-	262144 words	262144 words	-	-
character code	256000	256000	-	256000	256000	-	-
Operating mode	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	-	-
Maximum operating temperature	85 °C	85 °C	-	85 °C	70 °C	-	-
organize	256KX36	256KX36	-	256KX36	256KX36	-	-
Output characteristics	3-STATE	3-STATE	-	3-STATE	3-STATE	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
encapsulated code	BGA	TBGA	-	BGA	LQFP	-	-
Encapsulate equivalent code	BGA119,7X17,50	BGA165,11X15,40	-	BGA119,7X17,50	QFP100,.63X.87	-	-
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-	-
Package form	GRID ARRAY	GRID ARRAY, THIN PROFILE	-	GRID ARRAY	FLATPACK, LOW PROFILE	-	-
Parallel/Serial	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	-	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	225	-	NOT SPECIFIED	240	-	-
power supply	2.5,3.3 V	2.5,3.3 V	-	2.5,3.3 V	2.5,3.3 V	-	-
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	-	-
Maximum seat height	2.36 mm	1.2 mm	-	2.36 mm	1.6 mm	-	-
Maximum standby current	0.05 A	0.05 A	-	0.07 A	0.05 A	-	-
Minimum standby current	3.14 V	3.14 V	-	3.14 V	3.14 V	-	-
Maximum slew rate	0.325 mA	0.325 mA	-	0.28 mA	0.34 mA	-	-
Maximum supply voltage (Vsup)	3.465 V	3.465 V	-	3.465 V	3.465 V	-	-
Minimum supply voltage (Vsup)	3.135 V	3.135 V	-	3.135 V	3.135 V	-	-
Nominal supply voltage (Vsup)	3.3 V	3.3 V	-	3.3 V	3.3 V	-	-
surface mount	YES	YES	-	YES	YES	-	-
technology	CMOS	CMOS	-	CMOS	CMOS	-	-
Temperature level	INDUSTRIAL	INDUSTRIAL	-	INDUSTRIAL	COMMERCIAL	-	-
Terminal surface	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	-	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn85Pb15)	-	-
Terminal form	BALL	BALL	-	BALL	GULL WING	-	-
Terminal pitch	1.27 mm	1 mm	-	1.27 mm	0.65 mm	-	-
Terminal location	BOTTOM	BOTTOM	-	BOTTOM	QUAD	-	-
Maximum time at peak reflow temperature	NOT SPECIFIED	20	-	NOT SPECIFIED	20	-	-
width	14 mm	13 mm	-	14 mm	14 mm	-	-

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