5962F9582301VYC datasheet, PDF

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5962F9582301VYC: Description8KX8 STANDARD SRAM, 50ns, CDFP28; Categorystorage storage; File Size125KB，8 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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5962F9582301VYC Overview

8KX8 STANDARD SRAM, 50ns, CDFP28

5962F9582301VYC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Parts packaging code	DFP
package instruction	DFP, FL28,.4
Contacts	28
Reach Compliance Code	not_compliant
ECCN code	3A001.A.2.C
Maximum access time	50 ns
JESD-30 code	R-CDFP-F28
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	8KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP
Encapsulate equivalent code	FL28,.4
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class V
Maximum seat height	2.92 mm
Maximum standby current	0.006 A
Minimum standby current	2 V
Maximum slew rate	0.11 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
total dose	300k Rad(Si) V
width	12.445 mm
Base Number Matches	1

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HS-65647RH

Data Sheet

August 2000

File Number

2928.3

Radiation Hardened 8K x 8 SOS CMOS

Static RAM

The Intersil HS-65647RH is a fully asynchronous 8K x 8

radiation hardened static RAM. This RAM is fabricated using

the Intersil 1.2 micron silicon-on-sapphire CMOS technology.

This technology gives exceptional hardness to all types of

radiation, including neutron ﬂuence, total ionizing dose, high

intensity ionizing dose rates, and cosmic rays.

Low power operation is provided by a fully static design. Low

standby power can be achieved without pull-up resistors,

due to the gated input buffer design.

Speciﬁcations for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed here must be used when ordering.

Detailed Electrical Speciﬁcations for these devices are

contained in SMD 5962-95823. A “hot-link” is provided

on our homepage for downloading.

www.intersil.com/spacedefense/space.asp

Features

• Electrically Screened to SMD # 5962-95823

• QML Qualiﬁed per MIL-PRF-38535 Requirements

• 1.2 Micron Radiation Hardened SOS CMOS

- Total Dose. . . . . . . . . . . . . . . . . . . . . 300 krad(Si) (Max)

- Transient Upset . . . . . . . . . . . . . . . . . >1 x 10

rad(Si)/s

- Single Event Upset . . . . . . . . < 1 x 10

-12

Errors/Bit-Day

• Latch-up Free

• LET Threshold . . . . . . . . . . . . . . . . . . >250 MEV/mg/cm2

• Low Standby Supply Current . . . . . . . . . . . . . 10mA (Max)

• Low Operating Supply Current . . . . . . . . . .100mA (2MHz)

• Fast Access Time . . . . . . . . . . . . . 50ns (Max), 35ns (Typ)

• High Output Drive Capability

• Gated Input Buffers (Gated by E2)

• Six Transistor Memory Cell

• Fully Static Design

Ordering Information

ORDERING NUMBER

5962F9582301QXC

5962F9582301QYC

5962F9582301VXC

5962F9582301VYC

INTERNAL MKT.

NUMBER

HS1-65647RH-8

HS-965647RH-8

HS1-65647RH-Q

HS9-65647RH-Q

TEMP.

RANGE (

-55 to 125

• Asynchronous Operation

• CMOS Inputs

• 5V Single Power Supply

• Military Temperature Range . . . . . . . . . . . -55

C to 125

• Industry Standard JEDEC Pinout

Functional Diagram

ROW

DECODER

128 X 512

MEMORY ARRAY

HS1-65647RH/PROTO HS1-65647RH/PROTO

HS9-65647RH/PROTO HS9-65647RH/PROTO

TRUTH TABLE

MODE

Low Power Standby

Disabled

Enabled

Read

Write

CONTROL

CIRCUIT

I/O7

AI COL

I/O0

INPUT

DATA

CIRCUIT

COLUMN I/O

COLUMN DECODER

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

Intersil and Design is a trademark of Intersil Corporation.

5962F9582301VYC Related Products

	5962F9582301VYC	5962F9582301QXC	5962F9582301VXC	5962F9582301QYC
Description	8KX8 STANDARD SRAM, 50ns, CDFP28	8KX8 STANDARD SRAM, 50ns, CDIP28, CERAMIC, DIP-28	8KX8 STANDARD SRAM, 50ns, CDIP28	8KX8 STANDARD SRAM, 50ns, CDFP28
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation
Parts packaging code	DFP	DIP	DIP	DFP
package instruction	DFP, FL28,.4	DIP, DIP28,.6	DIP, DIP28,.6	DFP, FL28,.4
Contacts	28	28	28	28
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	50 ns	50 ns	50 ns	50 ns
JESD-30 code	R-CDFP-F28	R-CDIP-T28	R-CDIP-T28	R-CDFP-F28
JESD-609 code	e0	e0	e0	e0
memory density	65536 bit	65536 bit	65536 bit	65536 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8
Number of functions	1	1	1	1
Number of terminals	28	28	28	28
word count	8192 words	8192 words	8192 words	8192 words
character code	8000	8000	8000	8000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
organize	8KX8	8KX8	8KX8	8KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP	DIP	DIP	DFP
Encapsulate equivalent code	FL28,.4	DIP28,.6	DIP28,.6	FL28,.4
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	IN-LINE	IN-LINE	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q
Maximum seat height	2.92 mm	5.92 mm	5.92 mm	2.92 mm
Maximum standby current	0.006 A	0.006 A	0.006 A	0.006 A
Minimum standby current	2 V	2 V	2 V	2 V
Maximum slew rate	0.11 mA	0.11 mA	0.11 mA	0.11 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	YES	NO	NO	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	FLAT	THROUGH-HOLE	THROUGH-HOLE	FLAT
Terminal pitch	1.27 mm	2.54 mm	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
total dose	300k Rad(Si) V	300k Rad(Si) V	300k Rad(Si) V	300k Rad(Si) V
width	12.445 mm	15.24 mm	15.24 mm	12.445 mm
Base Number Matches	1	1	1	-

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