GBJ35A datasheet, PDF - EEWORLD Datasheet

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GBJ35A: Description35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size49KB，4 Pages; ManufacturerWon-Top Electronics Co., Ltd.; Websitehttps://www.wontop.com/

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GBJ35A Overview

35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ35A Parametric

Parameter Name	Attribute value
Number of terminals	4
Number of components	4
Minimum breakdown voltage	1000 V
Maximum average input current	35 A
Processing package description	PLASTIC, GBJ-6, 4 PIN
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	BRIDGE, 4 ELEMENTS
Shell connection	ANODE
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Phase	1
Maximum repetitive peak reverse voltage	1000 V
Maximum non-repetitive peak forward current	350 A

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WTE

POWER SEMICONDUCTORS

GBJ35A – GBJ35M

35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

GBJ-6

Dim

Min

Max

29.7

30.3

19.7

20.3

—

5.0

17.0

18.0

3.8

4.2

3.1Ø

3.4Ø

2.3

2.7

0.9

1.1

1.8

2.2

0.6

0.8

4.4

4.8

3.4

3.8

9.8

10.2

7.3

7.7

10.8

11.2

2.3

2.7

All Dimensions in mm

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

Recognized File # E157705

Mechanical Data

Case: GBJ-6, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 7.0 grams (approx.)

Mounting Position: Any

Mounting Torque: 10 cm-kg (8.8 in-lbs) Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

GBJ

35A

=25°C unless otherwise specified

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current @T

= 100°C

(Note 1)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

Forward Voltage per diode

Peak Reverse Current

At Rated DC Blocking Voltage

= 17.5A

= 25°C

= 125°C

Symbol

RRM

RWM

R(RMS)

GBJ

35B

100

GBJ

35D

200

140

GBJ

35G

400

280

GBJ

35J

600

420

GBJ

35K

800

560

GBJ

35M

1000

700

Unit

FSM

STG

350

1.1

350

1.0

-55 to +150

µA

°C/W

°C

Typical Thermal Resistance per leg (Note 2)

Typical Thermal Resistance per leg (Note 1)

Operating and Storage Temperature Range

Note: 1. Device mounted on 220 x 220 x 1.6mm thick Al plate heatsink.

2. Device mounted on P.C.B. without heatsink.

GBJ35A – GBJ35M

1 of 4

GBJ35A Related Products

	GBJ35A	GBJ35D	GBJ35G	GBJ35B	GBJ35M	GBJ35K	GBJ35J
Description	35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Number of terminals	4	4	4	4	4	4	4
Number of components	4	4	4	4	4	4	4
Minimum breakdown voltage	1000 V	1000 V	1000 V	1000 V	1000 V	1000 V	1000 V
Maximum average input current	35 A	35 A	35 A	35 A	35 A	35 A	35 A
Processing package description	PLASTIC, GBJ-6, 4 PIN	PLASTIC, GBJ-6, 4 PIN	PLASTIC, GBJ-6, 4 PIN	PLASTIC, GBJ-6, 4 PIN	PLASTIC, GBJ-6, 4 PIN	PLASTIC, GBJ-6, 4 PIN	PLASTIC, GBJ-6, 4 PIN
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Shell connection	ANODE	ANODE	ANODE	ANODE	ANODE	ANODE	ANODE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Phase	1	1	1	1	1	1	1
Maximum repetitive peak reverse voltage	1000 V	1000 V	1000 V	1000 V	1000 V	1000 V	1000 V
Maximum non-repetitive peak forward current	350 A	350 A	350 A	350 A	350 A	350 A	350 A

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