WTE
POWER SEMICONDUCTORS
GBJ35A – GBJ35M
Pb
35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
A
GBJ-6
Dim
Min
Max
29.7
30.3
A
19.7
20.3
B
—
5.0
C
17.0
18.0
D
3.8
4.2
E
3.1Ø
3.4Ø
G
2.3
2.7
H
0.9
1.1
J
1.8
2.2
K
0.6
0.8
L
4.4
4.8
M
3.4
3.8
N
9.8
10.2
P
7.3
7.7
R
10.8
11.2
S
2.3
2.7
T
All Dimensions in mm
!
Low Forward Voltage Drop
!
High Current Capability
G
!
High Reliability
!
High Surge Current Capability
!
Ideal for Printed Circuit Boards
C
!
Recognized File # E157705
H
J
B
+
~
~
-
K
E
P
M
N
R
R
D
Mechanical Data
!
!
!
!
!
!
!
Case: GBJ-6, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 7.0 grams (approx.)
Mounting Position: Any
Mounting Torque: 10 cm-kg (8.8 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
S
G
T
L
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBJ
35A
50
35
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
C
= 100°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage per diode
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 17.5A
@T
A
= 25°C
@T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
GBJ
35B
100
70
GBJ
35D
200
140
GBJ
35G
400
280
35
GBJ
35J
600
420
GBJ
35K
800
560
GBJ
35M
1000
700
Unit
V
V
A
I
FSM
V
FM
I
R
R
JA
R
JC
T
j,
T
STG
350
1.1
10
350
22
1.0
-55 to +150
A
V
µA
°C/W
°C/W
°C
Typical Thermal Resistance per leg (Note 2)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
Note: 1. Device mounted on 220 x 220 x 1.6mm thick Al plate heatsink.
2. Device mounted on P.C.B. without heatsink.
GBJ35A – GBJ35M
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© 2006 Won-Top Electronics
30
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
40
I
F
, AVERAGE FORWARD CURRENT (A)
100
10
20
1.0
10
0.1
T
j
= 25°C
Resistive or
Inductive load
Pulse Width = 300µs
0
0.01
0
0.2
0.4 0.6
0.8
1.0
1.2
1.4
1.6 1.8
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
Fig. 1 Forward. Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
I
FSM
, PEAK FWD. SURGE CURRENT (A)
400
Single Half-Sine Wave
(JEDEC Method)
1000
f = 1 Mhz
T
j
= 25°C
300
C
j
, CAPACITANCE (pF)
T
j
= 150°C
200
100
100
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
100
T
j
= 125°C
100
10
0.1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance (per element)
1.0
I
R
, INSTANTANEOUS REVERSE CURRENT (µA)
10
1.0
0.1
T
j
= 25°C
0.01
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics (per element)
GBJ35A – GBJ35M
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© 2006 Won-Top Electronics
MARKING INFORMATION
WTE
GBJ
+
~
35x
~
-
WTE
GBJ35x
x
Polarity
= Manufacturer’s Logo
= Device Number
= A, B, D, G, J, K or M
= As Marked on Body
PACKAGING INFORMATION
BULK
Tube Size
L x W x H (mm)
475 x 40 x 7
Quantity
(PCS)
15
Inner Box Size
L x W x H (mm)
490 x 145 x 135
Quantity
(PCS)
750
Carton Size
L x W x H (mm)
510 x 305 x 160
Quantity
(PCS)
1,500
Approx. Gross Weight
(KG)
16.0
Note:
1. Anti-static tube, water clear color.
GBJ35A – GBJ35M
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© 2006 Won-Top Electronics
ORDERING INFORMATION
Product No.
GBJ35A
GBJ35B
GBJ35D
GBJ35G
GBJ35J
GBJ35K
GBJ35M
1.
2.
Package Type
SIL Bridge
SIL Bridge
SIL Bridge
SIL Bridge
SIL Bridge
SIL Bridge
SIL Bridge
Shipping Quantity
15 Units/Tube
15 Units/Tube
15 Units/Tube
15 Units/Tube
15 Units/Tube
15 Units/Tube
15 Units/Tube
Shipping quantity given is for minimum packing quantity only. For minimum
order quantity, please consult the Sales Department.
To order Lead Free version (with Lead Free finish), add “-LF” suffix to part
number above. For example, GBJ35A-LF.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING:
DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone:
886-7-822-5408 or 886-7-822-5410
Fax:
886-7-822-5417
Email:
sales@wontop.com
Internet:
http://www.wontop.com
We power your everyday.
GBJ35A – GBJ35M
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© 2006 Won-Top Electronics