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GBJ35J

Description
35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size49KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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GBJ35J Overview

35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ35J Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage1000 V
Maximum average input current35 A
Processing package descriptionPLASTIC, GBJ-6, 4 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureBRIDGE, 4 ELEMENTS
Shell connectionANODE
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Phase1
Maximum repetitive peak reverse voltage1000 V
Maximum non-repetitive peak forward current350 A
WTE
POWER SEMICONDUCTORS
GBJ35A – GBJ35M
Pb
35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
A
GBJ-6
Dim
Min
Max
29.7
30.3
A
19.7
20.3
B
5.0
C
17.0
18.0
D
3.8
4.2
E
3.1Ø
3.4Ø
G
2.3
2.7
H
0.9
1.1
J
1.8
2.2
K
0.6
0.8
L
4.4
4.8
M
3.4
3.8
N
9.8
10.2
P
7.3
7.7
R
10.8
11.2
S
2.3
2.7
T
All Dimensions in mm
!
Low Forward Voltage Drop
!
High Current Capability
G
!
High Reliability
!
High Surge Current Capability
!
Ideal for Printed Circuit Boards
C
!
Recognized File # E157705

H
J
B
+
~
~
-
K
E
P
M
N
R
R
D
Mechanical Data
!
!
!
!
!
!
!
Case: GBJ-6, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 7.0 grams (approx.)
Mounting Position: Any
Mounting Torque: 10 cm-kg (8.8 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
S
G
T
L
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBJ
35A
50
35
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
C
= 100°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage per diode
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 17.5A
@T
A
= 25°C
@T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
GBJ
35B
100
70
GBJ
35D
200
140
GBJ
35G
400
280
35
GBJ
35J
600
420
GBJ
35K
800
560
GBJ
35M
1000
700
Unit
V
V
A
I
FSM
V
FM
I
R
R
JA
R
JC
T
j,
T
STG
350
1.1
10
350
22
1.0
-55 to +150
A
V
µA
°C/W
°C/W
°C
Typical Thermal Resistance per leg (Note 2)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
Note: 1. Device mounted on 220 x 220 x 1.6mm thick Al plate heatsink.
2. Device mounted on P.C.B. without heatsink.
GBJ35A – GBJ35M
1 of 4
© 2006 Won-Top Electronics

GBJ35J Related Products

GBJ35J GBJ35A GBJ35D GBJ35G GBJ35B GBJ35M GBJ35K
Description 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Number of terminals 4 4 4 4 4 4 4
Number of components 4 4 4 4 4 4 4
Minimum breakdown voltage 1000 V 1000 V 1000 V 1000 V 1000 V 1000 V 1000 V
Maximum average input current 35 A 35 A 35 A 35 A 35 A 35 A 35 A
Processing package description PLASTIC, GBJ-6, 4 PIN PLASTIC, GBJ-6, 4 PIN PLASTIC, GBJ-6, 4 PIN PLASTIC, GBJ-6, 4 PIN PLASTIC, GBJ-6, 4 PIN PLASTIC, GBJ-6, 4 PIN PLASTIC, GBJ-6, 4 PIN
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Shell connection ANODE ANODE ANODE ANODE ANODE ANODE ANODE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Phase 1 1 1 1 1 1 1
Maximum repetitive peak reverse voltage 1000 V 1000 V 1000 V 1000 V 1000 V 1000 V 1000 V
Maximum non-repetitive peak forward current 350 A 350 A 350 A 350 A 350 A 350 A 350 A

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