PRELIMINARY
SOLID STATE DEVICES, INC.
SFT8600/4
1 AMP
1000 VOLTS
NPN TRANSISTOR
CLCC-4
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
BVCER to 1000 volts
Very Low Saturation Voltage
Very Low Leakage
High Gain from 20 mA to 250mA
Gold Eutectic Die Attach
Superior Performance over JEDEC 2N5010-15 Series
High Speed Switching tf = 0.4:s TYP
MAXIMUM RATINGS
Collector-Emitter Voltage
( R
BE
= 1kS)
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
C
= 25
o
C
@ T
A
= 25
o
C
Derate above @ T
C
= 25
o
C
Operating and Storage Temperature
Thermal Resistance,
Junction to Case
Junction to Ambient
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
= 10mAdc)
(I
C
= 20:Adc, R
BE
= 1kS)
Collector-Base Breakdown Voltage
(I
C
= 20:Adc)
Emitter-Base Breakdown Voltage
(I
E
= 20:Adc)
Collector Cutoff Current
(V
CB
= 800Vdc)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
SYMBOL
V
CEO
V
CER
V
CBO
V
EBO
I
C
I
B
P
D
T
J,
T
STJ
R
2JC
SYMBOL
BV
CEO
BV
CER
BV
CBO
BV
EBO
I
CBO
VALUE
400
1000
1000
6
1
100
1.0
0.4
5.7
-65 to +200
175
440
MIN
400
1000
1000
6
-
MAX
-
-
-
10
UNITS
Volts
Volts
Volts
Amps
mA
W
W
mW/
o
C
o
C
o
C/W
UNITS
V
V
V
:A
DATA SHEET #: TR0003B
SFT8600/4
ELECTRICAL CHARACTERISTICS
Collector Cutoff Current
(V
CE
= 400V
DC
)
Emitter Cutoff Current
(V
EB
= 4V
DC
)
DC Current Gain *
(I
C
= 5mA
DC ,
V
CE
= 5V
DC
)
(I
C
= 10mA
DC ,
V
CE
= 5V
DC
)
(I
C
= 100mA
DC ,
V
CE
= 5V
DC
)
(I
C
= 250mA
DC ,
V
CE
= 5V
DC
)
Collector-Emitter Saturation Voltage *
(I
C
= 20mA
DC ,
I
B
= 2mA
DC
)
(I
C
= 100mA
DC ,
I
B
= 10mA
DC
)
Base-Emitter Saturation Voltage *
(I
C
= 20mA
DC ,
I
B
= 2mA
DC
)
(I
C
= 100mA
DC ,
I
B
= 10mA
DC
)
Current Gain Bandwidth Product
(I
C
= 100mA
DC ,
V
CE
= 10V
DC,
f = 10MHz)
Output Capacitance
(V
CB
= 20V
DC ,
I
E
= 0A
DC,
f = 1.0MHz)
Delay Time
(V
CC
= 125V
DC
,
Rise Time
I
C
= 100mA
DC ,
I
B1
= 20mA
DC ,
Storage Time
I
B2
= 40mA
DC
)
Fall Time
*Pulse Test: Pulse Width = 300
:
s, Duty Cycle = 2%
PRELIMINARY
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
SOLID STATE DEVICES, INC.
MIN
-
-
30
40
20
15
SYMBOL
I
CEO
I
EBO
hFE
MAX
10
1
UNITS
:
A
:
A
200
V
CE(SAT)
V
BE (SET)
fT
C
ob
t
d
t
r
t
s
t
f
0.3
0.5
V
DC
V
DC
MHz
pf
nsec
nsec
:sec
nsec
-
8
-
-
0.8
1.0
-
15
50
150
3
800
CASE OUTLINE: CLCC-4
PIN 1: COLLECTOR
PIN 2: EMITTER
PIN 3: BASE
PIN 4: N/C
Embedded System
京公网安备 11010802033920号
EEWORLD
