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HUM3002

Description
High Voltage, High Power Pin Diode
CategoryDiscrete semiconductor    diode   
File Size203KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

HUM3002 Overview

High Voltage, High Power Pin Diode

HUM3002 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDO-4
package instructionMODIFIED DO-4, 1 PIN
Contacts1
Reach Compliance Codeunknow
ECCN codeEAR99
applicationSWITCHING
Shell connectionCATHODE
ConfigurationSINGLE
Maximum diode capacitance5 pF
Diode component materialsSILICON
Maximum diode forward resistance0.2 Ω
Diode typePIN DIODE
JEDEC-95 codeDO-4
JESD-30 codeO-XUPM-N1
JESD-609 codee0
Minority carrier nominal lifetime30 µs
Number of components1
Number of terminals1
Package body materialUNSPECIFIED
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
surface mountNO
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
HUM3002/3003/3004
High Voltage, High Power Pin Diode
PRODUCT PREVIEW/PRELIMINARY
DESCRIPTION
KEY FEATURES
Non-magnetic Package For MRI
Application.
High Power, High Voltage
Package (4 kV -40 kW)
Stable High Voltage Chip
Passivation.
High Current Rating.
High Surge Current Rating.
Low Rs, Low Loss, Low Distortion
Design.
APPLICATIONS/BENEFITS
MRI Applications.
High Power Antenna Switching.
Band Switching.
Industrial Heating.
WWW .
Microsemi
.C
OM
These Microsemi PIN diodes are perfect for high power switching
applications where high isolation, low loss, low distortion characteristics, and
high power handling capability are critical. These PIN diodes utilize
Microsemi’s SOGO passivation process for superior stable high voltage
operation. The package is a modified DO-4 structure for ease of mount down
with excellent thermal properties. No thin internal straps are used for
electrical connections. A surge current of 150 amperes at half sine 8.3 ms is
easily handled.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
DO-4 PIN
DIODE
Maximum Ratings @ 25ºC
(UNLESS OTHERWISE SPECIFIED)
Parameter
Reverse Voltage
I
R
= 10µA
Average Power
Dissipation
@ Stud =50°C
RF Power Handling
Capability(CW)
@Zo = 50 OHms
Rs = 0.1 OHM
@ Stud =50°C
Non-Repetitive
Sinusoidal Surge
Current (8.3 ms)
Storage Temperature
Range
Operating Temperature
Range
Thermal resistance
Junction-to Case
Symbol
V
R
I
O
TYPE
HUM3002
2,000
50
HUM3003
3,000
50
HUM3004
4,000
50
Unit
V
W
P
RF
40
40
40
kW
I
FSM
T
STG
T
OP
R
θ
JC
150
-55°C to
+150°C
-55°C to
+125
1.5
150
-55°C to
+150°C
-55°C to
+125
1.5
150
-55°C to
+150°C
-55°C to
+125
1.5
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS
Parameter
Diode Resistance
Capacitance C
T
Reverse Current
Carrier Lifetime
Parallel Resistance
Forward Voltage
Symbol
R
S
C
T
I
R
τ
R
P
Vf
Conditions
F= 10 MHz, If = 250 mA
F= 1 MHz, 100 V
V
R
@ Rated Voltage
If
= 10 mA / 100 V
F= 1 MHz, 100 V
If = 0.5 A
Min
Typ.
0.1
4.3
Max
0.2
5.0
10
Units
pF
µA
µs
kΩ
V
20
5
30
0.75
Microsemi

HUM3002 Related Products

HUM3002 HUM3003 HUM3004
Description High Voltage, High Power Pin Diode High Voltage, High Power Pin Diode High Voltage, High Power Pin Diode
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
Parts packaging code DO-4 DO-4 DO-4
package instruction MODIFIED DO-4, 1 PIN MODIFIED DO-4, 1 PIN MODIFIED DO-4, 1 PIN
Contacts 1 1 1
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
application SWITCHING SWITCHING SWITCHING
Shell connection CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE
Maximum diode capacitance 5 pF 5 pF 5 pF
Diode component materials SILICON SILICON SILICON
Maximum diode forward resistance 0.2 Ω 0.2 Ω 0.2 Ω
Diode type PIN DIODE PIN DIODE PIN DIODE
JEDEC-95 code DO-4 DO-4 DO-4
JESD-30 code O-XUPM-N1 O-XUPM-N1 O-XUPM-N1
JESD-609 code e0 e0 e0
Minority carrier nominal lifetime 30 µs 30 µs 30 µs
Number of components 1 1 1
Number of terminals 1 1 1
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
technology POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1

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