HUM3003 datasheet, PDF - EEWORLD Datasheet

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HUM3003: DescriptionHigh Voltage, High Power Pin Diode; CategoryDiscrete semiconductor diode; File Size203KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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HUM3003 Overview

High Voltage, High Power Pin Diode

HUM3003 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	DO-4
package instruction	MODIFIED DO-4, 1 PIN
Contacts	1
Reach Compliance Code	unknow
ECCN code	EAR99
application	SWITCHING
Shell connection	CATHODE
Configuration	SINGLE
Maximum diode capacitance	5 pF
Diode component materials	SILICON
Maximum diode forward resistance	0.2 Ω
Diode type	PIN DIODE
JEDEC-95 code	DO-4
JESD-30 code	O-XUPM-N1
JESD-609 code	e0
Minority carrier nominal lifetime	30 µs
Number of components	1
Number of terminals	1
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
surface mount	NO
technology	POSITIVE-INTRINSIC-NEGATIVE
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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HUM3002/3003/3004

High Voltage, High Power Pin Diode

PRODUCT PREVIEW/PRELIMINARY

DESCRIPTION

KEY FEATURES

Non-magnetic Package For MRI

Application.

High Power, High Voltage

Package (4 kV -40 kW)

Stable High Voltage Chip

Passivation.

High Current Rating.

High Surge Current Rating.

Low Rs, Low Loss, Low Distortion

Design.

APPLICATIONS/BENEFITS

MRI Applications.

High Power Antenna Switching.

Band Switching.

Industrial Heating.

WWW .

Microsemi

These Microsemi PIN diodes are perfect for high power switching

applications where high isolation, low loss, low distortion characteristics, and

high power handling capability are critical. These PIN diodes utilize

Microsemi’s SOGO passivation process for superior stable high voltage

operation. The package is a modified DO-4 structure for ease of mount down

with excellent thermal properties. No thin internal straps are used for

electrical connections. A surge current of 150 amperes at half sine 8.3 ms is

easily handled.

IMPORTANT:

For the most current data, consult

MICROSEMI’s

website:

http://www.microsemi.com

DO-4 PIN

DIODE

Maximum Ratings @ 25ºC

(UNLESS OTHERWISE SPECIFIED)

Parameter

Reverse Voltage

= 10µA

Average Power

Dissipation

@ Stud =50°C

RF Power Handling

Capability(CW)

@Zo = 50 OHms

Rs = 0.1 OHM

@ Stud =50°C

Non-Repetitive

Sinusoidal Surge

Current (8.3 ms)

Storage Temperature

Range

Operating Temperature

Range

Thermal resistance

Junction-to Case

Symbol

TYPE

HUM3002

2,000

HUM3003

3,000

HUM3004

4,000

Unit

FSM

STG

150

-55°C to

+150°C

-55°C to

+125

1.5

150

-55°C to

+150°C

-55°C to

+125

1.5

150

-55°C to

+150°C

-55°C to

+125

1.5

°C

°C/W

ELECTRICAL CHARACTERISTICS

Parameter

Diode Resistance

Capacitance C

Reverse Current

Carrier Lifetime

Parallel Resistance

Forward Voltage

Symbol

Conditions

F= 10 MHz, If = 250 mA

F= 1 MHz, 100 V

@ Rated Voltage

= 10 mA / 100 V

F= 1 MHz, 100 V

If = 0.5 A

Min

Typ.

0.1

4.3

Max

0.2

5.0

Units

Ω

µA

µs

kΩ

0.75

Microsemi

HUM3003 Related Products

	HUM3003	HUM3002	HUM3004
Description	High Voltage, High Power Pin Diode	High Voltage, High Power Pin Diode	High Voltage, High Power Pin Diode
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible
Parts packaging code	DO-4	DO-4	DO-4
package instruction	MODIFIED DO-4, 1 PIN	MODIFIED DO-4, 1 PIN	MODIFIED DO-4, 1 PIN
Contacts	1	1	1
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
application	SWITCHING	SWITCHING	SWITCHING
Shell connection	CATHODE	CATHODE	CATHODE
Configuration	SINGLE	SINGLE	SINGLE
Maximum diode capacitance	5 pF	5 pF	5 pF
Diode component materials	SILICON	SILICON	SILICON
Maximum diode forward resistance	0.2 Ω	0.2 Ω	0.2 Ω
Diode type	PIN DIODE	PIN DIODE	PIN DIODE
JEDEC-95 code	DO-4	DO-4	DO-4
JESD-30 code	O-XUPM-N1	O-XUPM-N1	O-XUPM-N1
JESD-609 code	e0	e0	e0
Minority carrier nominal lifetime	30 µs	30 µs	30 µs
Number of components	1	1	1
Number of terminals	1	1	1
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
technology	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1

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